MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
First Claim
1. A magnetoresistance effect element, comprising:
- a fixed layer including a first ferromagnetic layer of a magnetization direction invariable in a direction perpendicular to a film surface;
a second ferromagnetic layer of a magnetization direction variable in the direction perpendicular to the film surface;
a first non-magnetic layer adjacent to the second ferromagnetic layer;
a non-magnetic coupling layer adjacent to a surface of the second ferromagnetic layer on a side opposite the first non-magnetic layer;
a third ferromagnetic layer of a magnetization direction variable in the direction perpendicular to the film surface adjacent to a surface of the non-magnetic coupling layer on a side opposite the second ferromagnetic layer; and
a second non-magnetic layer adjacent to a surface of the third ferromagnetic layer on a side opposite the non-magnetic coupling layer,wherein the second and third ferromagnetic layers each include at least one of Fe, Co and Ni and include at least one of B, C, N, O, F, Si, Al, P and S in order to place each of the second and third ferromagnetic layers in an amorphous condition immediately after thin film deposition thereof,the second and third ferromagnetic layers have the same magnetization direction, and a total of the respective thicknesses of the second and third ferromagnetic layers is 2 nm or more, andthe non-magnetic coupling layer has a thickness of 0.3 nm or more and less than 1.0 nm.
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Accused Products
Abstract
A magnetoresistance effect element including a recording layer of high thermal stability to perform perpendicular magnetic recording within a film surface, and a magnetic memory using the element. The element includes: a first ferromagnetic layer of an invariable magnetization direction; a second ferromagnetic layer of a variable magnetization direction; a first non-magnetic layer between the first and second ferromagnetic layers; current supply terminals connected to the first and second ferromagnetic layers; a non-magnetic coupling layer on a surface of the second ferromagnetic layer opposite the first non-magnetic layer; a third ferromagnetic layer of a variable magnetization direction on a surface of the non-magnetic coupling layer opposite the second ferromagnetic layer; and a second non-magnetic layer on a surface of the third ferromagnetic layer opposite the non-magnetic coupling layer. The second and third ferromagnetic layers have the same magnetization direction and are reversed in magnetization by spin injection with a current.
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Citations
15 Claims
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1. A magnetoresistance effect element, comprising:
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a fixed layer including a first ferromagnetic layer of a magnetization direction invariable in a direction perpendicular to a film surface; a second ferromagnetic layer of a magnetization direction variable in the direction perpendicular to the film surface; a first non-magnetic layer adjacent to the second ferromagnetic layer; a non-magnetic coupling layer adjacent to a surface of the second ferromagnetic layer on a side opposite the first non-magnetic layer; a third ferromagnetic layer of a magnetization direction variable in the direction perpendicular to the film surface adjacent to a surface of the non-magnetic coupling layer on a side opposite the second ferromagnetic layer; and a second non-magnetic layer adjacent to a surface of the third ferromagnetic layer on a side opposite the non-magnetic coupling layer, wherein the second and third ferromagnetic layers each include at least one of Fe, Co and Ni and include at least one of B, C, N, O, F, Si, Al, P and S in order to place each of the second and third ferromagnetic layers in an amorphous condition immediately after thin film deposition thereof, the second and third ferromagnetic layers have the same magnetization direction, and a total of the respective thicknesses of the second and third ferromagnetic layers is 2 nm or more, and the non-magnetic coupling layer has a thickness of 0.3 nm or more and less than 1.0 nm. - View Dependent Claims (2, 4, 7, 8, 9, 10, 11, 12, 13, 14)
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3. (canceled)
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5. (canceled)
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6. (canceled)
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15. A magnetoresistance effect element, comprising:
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a fixed layer including a first ferromagnetic layer of a magnetization direction invariable in a direction perpendicular to a film surface; a second ferromagnetic layer of a magnetization direction variable in the direction perpendicular to the film surface; a first non-magnetic layer adjacent to the second ferromagnetic layer; a non-magnetic coupling layer adjacent to a surface of the second ferromagnetic layer on a side opposite the first non-magnetic layer; a third ferromagnetic layer of a magnetization direction variable in the direction perpendicular to the film surface adjacent to a surface of the non-magnetic coupling layer on a side opposite the second ferromagnetic layer; and a second non-magnetic layer adjacent to a surface of the third ferromagnetic layer on a side opposite the non-magnetic coupling layer, wherein the second and third ferromagnetic layers each include at least one of Fe, Co and Ni and include at least one of B, C, N, O, F, Si, Al, P and S, the second and third ferromagnetic layers have the same magnetization direction, and a total of the respective thicknesses of the second and third ferromagnetic layers is 2 nm or more, and the non-magnetic coupling layer has a thickness of 0.3 nm or more and less than 1.0 nm.
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Specification