FIELD EFFECT SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
First Claim
1. A field effect component, comprising a semiconductor body, which extends in an edge zone from a rear side as far as a surface of the semiconductor body, and which comprises a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the surface, as far as a semiconductor mesa top side arranged at a height above the surface, wherein the semiconductor body in a vertical cross section further comprises:
- a drift region, which extends at least in the edge region as far as the surface and which is arranged partly in the semiconductor mesa; and
a body region, which is arranged at least partly in the semiconductor mesa and which forms a first pn junction with the drift region, said first pn junction extending between two sidewalls of the semiconductor mesa, wherein a vertical distance between the first pn junction and the semiconductor mesa top side varies in a horizontal direction and assumes a largest value in a central zone spaced apart from the two sidewalls, and wherein the largest value is at least 70% of the height.
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Accused Products
Abstract
What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.
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Citations
20 Claims
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1. A field effect component, comprising a semiconductor body, which extends in an edge zone from a rear side as far as a surface of the semiconductor body, and which comprises a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the surface, as far as a semiconductor mesa top side arranged at a height above the surface, wherein the semiconductor body in a vertical cross section further comprises:
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a drift region, which extends at least in the edge region as far as the surface and which is arranged partly in the semiconductor mesa; and a body region, which is arranged at least partly in the semiconductor mesa and which forms a first pn junction with the drift region, said first pn junction extending between two sidewalls of the semiconductor mesa, wherein a vertical distance between the first pn junction and the semiconductor mesa top side varies in a horizontal direction and assumes a largest value in a central zone spaced apart from the two sidewalls, and wherein the largest value is at least 70% of the height. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A field effect component, comprising a semiconductor body, which extends in an edge zone from a rear side as far as a surface and which comprises a semiconductor mesa, which extends in a vertical direction, which is parallel to a normal vector of the rear side and/or a normal vector of the surface, as far as a semiconductor mesa top side arranged above the surface, wherein the semiconductor body in a vertical cross section further comprises:
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a drift region, which extends at least in the edge zone as far as the surface and which is arranged partly in the semiconductor mesa; and a body region, which is arranged at least partly in the semiconductor mesa and which comprises two first partial zones, each adjoining one of two sidewalls of the semiconductor mesa, and a second partial zone arranged between the two first partial zones, wherein the two first partial zones and the second partial zone form a first pn junction with the drift region, said first pn junction extending between the two sidewalls of the semiconductor mesa, wherein the second partial zone extends into the drift region vertically more deeply than the two first partial zones, and wherein the second partial zone has a greater maximum dopant concentration than the two first partial zones. - View Dependent Claims (14)
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15. A method for producing a field effect component, comprising:
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providing a wafer, comprising a first semiconductor layer of a first conduction type, a second semiconductor layer of a second conduction type, which is arranged on the first semiconductor layer and which forms a first pn junction with the first semiconductor layer, and a third semiconductor layer, which is arranged on the second semiconductor layer and which forms a second pn junction with the second semiconductor layer and extends as far as a top side of the wafer; forming a mesa mask on the top side of the wafer with a plurality of openings; etching the wafer through the mesa mask, thus giving rise to deep tranches and semiconductor mesas arranged between the deep trenches, wherein the deep trenches extend right into the first semiconductor layer; and implanting dopants of the first conduction type into at least one semiconductor zone adjoining the first pn junction. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification