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SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

  • US 20150115375A1
  • Filed: 10/01/2014
  • Published: 04/30/2015
  • Est. Priority Date: 10/24/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a gate insulation layer pattern on a substrate;

    a lower gate electrode on the gate insulation layer pattern;

    an upper gate electrode on the lower gate electrode, the upper gate electrode having a width that gradually increases from a bottom portion toward a top portion thereof, the width of the bottom portion of the upper gate electrode being smaller than a width of a top surface of the lower gate electrode; and

    a spacer on a sidewall of the upper gate electrode.

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