SUBSTRATE TREATING APPARATUS AND METHOD
First Claim
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1. A substrate treating apparatus, comprising:
- a processing chamber having an inner space;
a substrate supporting unit disposed in the processing chamber and supporting a substrate;
an antenna plate disposed above the substrate supporting unit and having a plurality of slots therein;
a dielectric plate provided under the antenna plate, and allowing microwave to be propagated into and pass through the inner space of the processing chamber; and
a gas supplying unit provided at a height between the dielectric plate and the substrate supporting unit, and supplying a gas into the processing chamber,wherein the gas supplying unit comprisesa first injection unit disposed at a first height and supplying a first gas anda second injection unit positioned at a second height which is lower than the first height, and supplying a second gas which differs in type from the first gas.
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Abstract
Provided is a substrate treating apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, an antenna plate, a dielectric plate, a gas supplying unit or the like. In the gas supplying unit, an excitation gas injection unit is provided at a position higher than that of a process injection unit so as to inject an excitation gas containing an inert gas from a position higher than that of a process gas, thereby preventing a damage of the dielectric plate, generating high-density plasma, and preventing degradation of process performance in a process which is performed under a process pressure of 50 mTorr or more or uses a hydrogen gas.
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Citations
16 Claims
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1. A substrate treating apparatus, comprising:
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a processing chamber having an inner space; a substrate supporting unit disposed in the processing chamber and supporting a substrate; an antenna plate disposed above the substrate supporting unit and having a plurality of slots therein; a dielectric plate provided under the antenna plate, and allowing microwave to be propagated into and pass through the inner space of the processing chamber; and a gas supplying unit provided at a height between the dielectric plate and the substrate supporting unit, and supplying a gas into the processing chamber, wherein the gas supplying unit comprises a first injection unit disposed at a first height and supplying a first gas and a second injection unit positioned at a second height which is lower than the first height, and supplying a second gas which differs in type from the first gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification