SUBSTRATE TREATING APPARATUS AND METHOD

• US 20150118416A1
• Filed: 10/30/2014
• Published: 04/30/2015
• Est. Priority Date: 10/31/2013
• Status: Abandoned Application

• Current Assignee: Semes Co., Ltd (Samsung Electronics Co. Ltd.)
• Original Assignee: Semes Co., Ltd (Samsung Electronics Co. Ltd.)
• Inventors: JANG, Yong Su, HONG, Sung Hwan
• Application Number:
  US14/527,955
• Publication Number:
  US 20150118416A1
• Time in Patent Office: Days
• US Class Current: 427/575
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/4558 Perforated rings
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

Provided is a substrate treating apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, an antenna plate, a dielectric plate, a gas supplying unit or the like. In the gas supplying unit, an excitation gas injection unit is provided at a position higher than that of a process injection unit so as to inject an excitation gas containing an inert gas from a position higher than that of a process gas, thereby preventing a damage of the dielectric plate, generating high-density plasma, and preventing degradation of process performance in a process which is performed under a process pressure of 50 mTorr or more or uses a hydrogen gas.

Claims

1. A substrate treating apparatus, comprising:

a processing chamber having an inner space;

a substrate supporting unit disposed in the processing chamber and supporting a substrate;

an antenna plate disposed above the substrate supporting unit and having a plurality of slots therein;

a dielectric plate provided under the antenna plate, and allowing microwave to be propagated into and pass through the inner space of the processing chamber; and

a gas supplying unit provided at a height between the dielectric plate and the substrate supporting unit, and supplying a gas into the processing chamber,

wherein the gas supplying unit comprises

a first injection unit disposed at a first height and supplying a first gas and

a second injection unit positioned at a second height which is lower than the first height, and supplying a second gas which differs in type from the first gas.

2. The substrate treating apparatus of claim 1, wherein the first injection unit injects an exited gas and the second injection unit injects a process gas.

3. The substrate treating apparatus of claim 2, wherein the first injection unit has a plurality of first gas injection holes therein, and the second injection unit has a plurality of second gas injection holes therein,

wherein each of the first and second injection units has a ring shape.

4. The substrate treating apparatus of claim 3, wherein when a wavelength of the microwave passing through the dielectric plate is λ

, a distance between the dielectric plate and the first gas injection hole ranges from (⅛

)λ

to (⅜

)λ

.

5. The substrate treating apparatus of claim 3, wherein when a wavelength of the microwave passing through the dielectric plate is λ

, a distance between the first gas injection hole and the second gas injection hole ranges from (⅛

)λ

to (⅜

)λ

.

6. The substrate treating apparatus of claim 3, wherein when a wavelength of the microwave passing through the dielectric plate is λ

, a distance between the second gas injection hole and the substrate provided on the substrate supporting unit ranges from (⅜

)λ

to (⅝

)λ

.

7. The substrate treating apparatus of claim 4, wherein when a wavelength of the microwave passing through the dielectric plate is λ

, a distance between the first gas injection hole and the second gas injection hole ranges from (⅛

)λ

to (⅜

)λ

, and a distance between the second gas injection hole 3 and the substrate provided on the substrate supporting unit ranges from (⅜

)λ

to (⅝

)λ

.

8. The substrate treating apparatus of claim 7, wherein a wavelength of the microwave passing through the dielectric plate is λ

, a distance between the dielectric plate and the first gas injection hole and a distance between the first injection hole and the second injection hole are (¼

)λ

, and a distance between the second gas injection hole and the substrate supporting unit is ( 2/4)λ

.

9. The substrate treating apparatus of claim 7, wherein a distance between the dielectric plate and the substrate supporting unit is 120 mm.

10. The substrate treating apparatus of any one of claim 1, wherein the gas supplying unit comprises a third injection unit,

wherein the third injection unit injects a cleaning gas.

11. The substrate treating apparatus of claim 10, wherein the third injection unit is provided under the second injection unit.

12. The substrate treating apparatus of claim 10, wherein the first injection unit has a plurality of first gas injection holes therein, the second injection unit has a plurality of second gas injection holes therein, and the third injection unit has a plurality of third gas injection holes therein,

wherein each of the first, second and third injection units has a ring shape.

13. The substrate treating apparatus of any one of claim 1, further comprising a slow-wave plate provided above the antenna plate and allowing a wavelength of the microwave to be shortened.

14. A substrate treating method using the substrate treating apparatus of claim 3, wherein a pressure in the processing chamber is 50 mTorr or more while a process is performed.

15. A substrate treating method using the substrate treating apparatus of claim 3, wherein the second injection unit injects a process gas containing a hydrogen gas.

16. The substrate treating method of claim 14, wherein an amount of the hydrogen gas is not less than 20% of a total gas amount in the processing chamber.