RADIO FREQUENCY SWITCHING CIRCUIT WITH ADVANCED ISOLATION CHARACTERISTICS

• US 20150118976A1
• Filed: 05/19/2014
• Published: 04/30/2015
• Est. Priority Date: 10/28/2013
• Status: Active Grant

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: KIM, Yoo Hwan, NA, Yoo Sam, YOO, Hyun Jin, KIM, Jong Myeong, YOO, Hyun Hwan
• Granted Patent: US 9,209,854 B2
• Time in Patent Office: Days
• US Class Current: 455/78
• CPC Class Codes: H01P 1/15 by semiconductor devices
• CPC Class Codes: H03K 17/163 Soft switching
• CPC Class Codes: H03K 17/166 Soft switching
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H04B 1/44 Transmit/receive switching
• CPC Class Codes: H04W 52/0209 in terminal devices terminal devices per se H04W88/02
• CPC Class Codes: Y02D 30/70 in wireless communication networks

Abstract

A radio frequency switching circuit may include a first switching circuit unit including first to n^th (n is a natural number greater than at least 2) transistors M1 to Mn connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal; a second switching circuit unit connected in series between the common connection node and a second signal port for transmission and reception of signals and operated according to a second gate signal; and a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of the first transistor of the first switching circuit unit when the first switching circuit unit is in an off-state.

Claims

1. A radio frequency switching circuit comprising:

a first switching circuit unit including first to n^th (n is a natural number greater than at least

     2) transistors M1 to Mn connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal;

a second switching circuit unit connected in series between the common connection node and a second signal port for transmission and reception of signals and operated according to a second gate signal; and

a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of the first transistor of the first switching circuit unit when the first switching circuit unit is in an off-state.

2. The radio frequency switching circuit of claim 1, wherein the first impedance adjuster includes a first switching device and a first capacitor connected in series between the ground and the gate of the first transistor of the first switching circuit unit, and

the first switching device performs a complementary switching operation in conjunction with the first switching circuit unit and alternately grounds the gate of the first transistor of the first switching circuit unit through the first capacitor.

3. The radio frequency switching circuit of claim 2, wherein the first switching device of the first impedance adjuster is in an on-state to bypass a signal supplied to the gate of the first transistor of the first switching circuit unit to the ground through the first capacitor of the first impedance adjuster when the first switching circuit unit is in an off-state.

4. The radio frequency switching circuit of claim 2, wherein the first capacitor of the first impedance adjuster has higher capacitance than parasitic capacitance between the gate and a source of the first transistor of the first transistor of the first switching circuit unit.

5. A radio frequency switching circuit comprising:

a reception switching circuit unit including first to n^th (n is a natural number greater than at least

     2) transistors connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal;

a transmission switching circuit unit including first to m^th (m is a natural number greater than at least

     2) transistors connected in series between a second signal port for transmission and reception of signals and the common connection node and operated according to a second gate signal;

a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of the first transistor of the reception switching circuit unit when the reception switching circuit unit is in an off-state; and

a second impedance adjuster forming an AC ground path between a ground and a gate of the first transistor of the transmission switching circuit unit when the transmission switching circuit unit is in an off-state.

6. The radio frequency switching circuit of claim 5, wherein the first impedance adjuster includes a first switching device and a first capacitor connected in series between the ground and the gate of the first transistor of the reception switching circuit unit, and

the first switching device performs a complementary switching operation in conjunction with the reception switching circuit unit and alternately grounds the gate of the first transistor of the reception switching circuit unit through the first capacitor.

7. The radio frequency switching circuit of claim 6, wherein the first switching device of the first impedance adjuster is in an on-state to bypass a signal supplied to the gate of the first transistor of the reception switching circuit unit to the ground through the first capacitor of the first impedance adjuster when the reception switching circuit unit is in an off-state.

8. The radio frequency switching circuit of claim 6, wherein the first capacitor of the first impedance adjuster has higher capacitance than parasitic capacitance between the gate and a source of the first transistor of the reception switching circuit unit.

9. The radio frequency switching circuit of claim 5, wherein the second impedance adjuster includes a second switching device and a second capacitor connected in series between the ground and the gate of the first transistor of the transmission switching circuit unit, and

the second switching device performs a complementary switching operation in conjunction with the transmission switching circuit unit and alternately grounds the gate of the first transistor of the transmission switching circuit unit through the second capacitor.

10. The radio frequency switching circuit of claim 9, wherein the second switching device of the second impedance adjuster is in an on-state to bypass a signal supplied to the gate of the first transistor of the transmission switching circuit unit to the ground through the second capacitor of the second impedance adjuster when the transmission switching circuit unit is in an off-state.

11. The radio frequency switching circuit of claim 9, wherein the second capacitor of the second impedance adjuster has higher capacitance than parasitic capacitance between the gate and a source of the first transistor of the transmission switching circuit unit.

12. A radio frequency switching circuit comprising:

a reception switching circuit unit including first to n^th (n is a natural number greater than at least

     2) transistors connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal,

a transmission switching circuit unit including first to m^th (m is a natural number greater than at least

     2) transistors connected in series between a second signal port for transmission and reception of signals and the common connection node and operated according to a second gate signal;

a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of each of at least two transistors including the first transistor among the first to n^th transistors of the reception switching circuit unit when the reception switching circuit unit is in an off-state, and

a second impedance adjuster forming an AC ground path between a ground and a gate of each of at least two transistors including the first transistor among the first to m^th transistors of the transmission switching circuit unit when the transmission switching circuit unit is in an off-state.

13. The radio frequency switching circuit of claim 12, wherein the first impedance adjuster includes first to n^th impedance circuit units connected between grounds and gates of the respective first to n^th transistors of the reception switching circuit unit,

each of the first to n^th impedance circuit units includes a first switching device and a first capacitor connected in series between the ground and the gate of each of the first to n^th transistors of the reception switching circuit unit, and

the first switching device performs a complementary switching operation in conjunction with the reception switching circuit unit and alternately grounds the gate of a corresponding transistor of the reception switching circuit unit through the first capacitor.

14. The radio frequency switching circuit of claim 13, wherein the first switching device of the first impedance adjuster is in an on-state to bypass a signal supplied to the gate of the corresponding transistor among the first to n^th transistors of the reception switching circuit unit through the first capacitor of the first impedance adjuster when the reception switching circuit unit is in an off-state.

15. The radio frequency switching circuit of claim 13, wherein the first capacitor of the first impedance adjuster has higher capacitance than parasitic capacitance between the gate and a source of the corresponding transistor of the first to n^th transistors of the reception switching circuit unit.

16. The radio frequency switching circuit of claim 12, wherein the second impedance adjuster includes first to m^th impedance circuit units connected between grounds and gates of the respective first to m^th transistors of the transmission switching circuit unit,

each of the first to m^th impedance circuit units includes a second switching device and a second capacitor connected in series between the ground and the gate of each of the first to m^th transistors of the transmission switching circuit unit, and

the second switching device performs a complementary switching operation in conjunction with the transmission switching circuit unit and alternately grounds the gate of a corresponding transistor of the transmission switching circuit unit through the second capacitor.

17. The radio frequency switching circuit of claim 16, wherein the second switching device of the second impedance adjuster is in an on-state to bypass a signal supplied to the gate of the corresponding transistor among the first to m^th transistors of the transmission switching circuit unit to the ground through the second capacitor of the second impedance adjuster when the transmission switching circuit unit is an off-state.

18. The radio frequency switching circuit of claim 16, wherein the second capacitor of the second impedance adjuster has higher capacitance than parasitic capacitance between the gate and a source of the corresponding transistor of the first to m^th transistors of the transmission switching circuit unit.