THERMALLY CONDUCTIVE SILICONE SHEET, MANUFACTURING METHOD THEREOF, AND PLASMA PROCESSING APPARATUS USING THE SAME

• US 20150122422A1
• Filed: 11/04/2014
• Published: 05/07/2015
• Est. Priority Date: 11/05/2013
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Fuji Polymer Industries Co., Ltd. (Chugai Co., Ltd.), Tokyo Electron Limited
• Inventors: Hayasaka, Yusuke, Suzumura, Katsuyuki
• Application Number:
  US14/532,175
• Publication Number:
  US 20150122422A1
• Time in Patent Office: Days
• US Class Current: 156/345.53
• CPC Class Codes: C09K 5/14 Solid materials, e.g. powdery or granular
• CPC Class Codes: H01J 37/32467 Material
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32642 Focus rings
• CPC Class Codes: H01J 37/32724 Temperature

Abstract

A plasma processing apparatus includes a thermally conductive silicone sheet between a mounting table and a focus ring. The thermally conductive silicone sheet has 100 parts by weight to 2000 parts by weight of thermally conductive particles with respect to 100 parts by weight of polyorganosiloxane, and the sheet has a thermal conductivity of 0.2 W/m·K to 5 W/m·K. Further, when the sheet has a shape of 38 mm in length, 38 mm in width, and 3 mm in thickness and is interposed between filter papers each having a diameter of 70 mm and kept under a load of 1 kg at 70° C. for 1 week, a bleed-out amount of a liquid component is 30 mg or less.

Claims

1. A thermally conductive silicone sheet for a plasma processing apparatus, having 100 parts by weight to 2000 parts by weight of thermally conductive particles with respect to 100 parts by weight of polyorganosiloxane,

wherein the sheet has a thermal conductivity of 0.2 W/m·

K to 5 W/m·

K and a hardness of 5 to 60 (ASKER C), and

when the sheet has a shape of 38 mm in length, 38 mm in width, and 3 mm in thickness and is interposed between filter papers each having a diameter of 70 mm and kept under a load of 1 kg at 70°

C. for 1 week, a bleed-out amount of a liquid component is 30 mg or less.

2. The thermally conductive silicone sheet of claim 1,

wherein the thermally conductive particles include at least two inorganic particles having average particle diameters different from each other, and

the inorganic particles having a relatively smaller average particle diameter are surface-treated with a silane compound expressed by R(CH₃)_aSi(OR′

)_3-a (R represents a substituted or unsubstituted organic group having 6 to 20 carbon atoms, R′

represents an alkyl group having 1 to 4 carbon atoms, and a is 0 or

     1), or a partial hydrolysate thereof.

3. The thermally conductive silicone sheet of claim 1,

wherein the thermally conductive particles includes at least one selected from a group consisting of alumina, zinc oxide, magnesium oxide, aluminum nitride, boron nitride, aluminum hydroxide, and silica.

4. The thermally conductive silicone sheet of claim 3,

wherein the alumina is α

-alumina having a purity of 99.5 weight % or more.

5. The thermally conductive silicone sheet of claim 1,

wherein inorganic pigment particles are further added into the thermally conductive silicone sheet.

6. A manufacturing method of the thermally conductive silicone sheet for the plasma processing apparatus of claim 1, the manufacturing method comprising:

forming the sheet by sheet-forming and cross-linking a compound having compositions of;

base polymer component (A);

A straight chain organopolysiloxane having, on average, two or more alkenyl groups bonded with a silicon atom at both ends of a molecular chain in one molecule and a branched silicone resin without having an aliphatic unsaturated bond but including a R¹SiO_3/2 unit and/or a SiO_4/2 unit are included. Here, R¹ represents an organic group which is an unsubstituted monovalent hydrocarbon group or substituted monovalent hydrocarbon group in which at least a part of hydrogen atoms bonded to a carbon atom are substituted with a halogen atom or a cyano group, without having an aliphatic unsaturated bond;

cross-linking component (B);

A polyorganohydrogen siloxane expressed by R²Si(OSiR³₂H)₃ has 0.3 to 1.5 SiH groups with respect to one alkenyl group of the component (A). Here, R² represents an alkyl group or a phenyl group having 1 to 4 carbon atoms, and R³ represents an alkyl group having 1 to 4 carbon atoms;

platinum-based metal catalyst (C);

0.01 ppm to 1000 ppm in a weight unit with respect to the component (A); and

thermally conductive particle (D);

100 to 2000 parts by weight with respect to total 100 parts by weight of the component (A) and the component (B).

7. A plasma processing apparatus comprising:

a decompressed accommodation chamber in which a target substrate is accommodated;

a mounting table which is provided within the accommodation chamber to mount thereon the target substrate and has a cooling device; and

an annular focus ring which is mounted on the mounting table to surround a periphery of the target substrate,

wherein a thermally conductive silicone sheet is provided between the mounting table and the focus ring, and

the thermally conductive silicone sheet has 100 parts by weight to 2000 parts by weight of thermally conductive particles with respect to 100 parts by weight of polyorganosiloxane, and the sheet has a thermal conductivity of 0.2 W/m·

K to 5 W/m·

K and a hardness of 5 to 60 (ASKER C), and when the sheet has a shape of 38 mm in length, 38 mm in width, and 3 mm in thickness, and is interposed between filter papers each having a diameter of 70 mm and kept under a load of 1 kg at 70°

C. for 1 week, a bleed-out amount of a liquid component is 30 mg or less.

8. The plasma processing apparatus of claim 7, further comprising:

a pressing unit configured to press the focus ring against the mounting table.

9. The plasma processing apparatus of claim 8,

wherein the focus ring includes a ring-shaped lower member in contact with the mounting table and a ring-shaped upper member mounted on the lower member via the thermally conductive silicone sheet, and the pressing unit fastens the lower member to the mounting table by screw fixing.

10. The plasma processing apparatus of claim 9,

wherein the lower member is made of a dielectric material or a conductive material.