SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor film;
a gate electrode layer, the oxide semiconductor film overlapping the gate electrode layer;
a gate insulating film between the oxide semiconductor film and the gate electrode layer;
a metal oxide film overlapping the oxide semiconductor film, the oxide semiconductor film positioned between the metal oxide film and the gate insulating film; and
a source electrode layer and a drain electrode layer over the metal oxide film,wherein the metal oxide film covers a channel region and a side surface of the oxide semiconductor film,wherein the metal oxide film has a first opening and a second opening reaching the oxide semiconductor film, andwherein the source electrode layer is electrically connected to the oxide semiconductor film through the first opening, and the drain electrode layer is electrically connected to the oxide semiconductor film through the second opening.
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Accused Products
Abstract
A highly reliable semiconductor device including an oxide semiconductor is provided. The concentration of impurities contained in an oxide semiconductor of a semiconductor device including the oxide semiconductor is reduced. Electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes an oxide semiconductor film; a gate electrode layer overlapping with the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode layer; a metal oxide film overlapping with the gate insulating film with the oxide semiconductor film positioned therebetween; and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film. The metal oxide film covers at least a channel region and a side surface of the oxide semiconductor film.
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Citations
18 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film; a gate electrode layer, the oxide semiconductor film overlapping the gate electrode layer; a gate insulating film between the oxide semiconductor film and the gate electrode layer; a metal oxide film overlapping the oxide semiconductor film, the oxide semiconductor film positioned between the metal oxide film and the gate insulating film; and a source electrode layer and a drain electrode layer over the metal oxide film, wherein the metal oxide film covers a channel region and a side surface of the oxide semiconductor film, wherein the metal oxide film has a first opening and a second opening reaching the oxide semiconductor film, and wherein the source electrode layer is electrically connected to the oxide semiconductor film through the first opening, and the drain electrode layer is electrically connected to the oxide semiconductor film through the second opening. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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an oxide semiconductor film; a gate electrode layer, the oxide semiconductor film overlapping the gate electrode layer; a gate insulating film between the oxide semiconductor film and the gate electrode layer; a metal oxide film overlapping the oxide semiconductor film, the oxide semiconductor film positioned between the metal oxide film and the gate insulating film; and a source electrode layer and a drain electrode layer over the metal oxide film, wherein a conduction band minimum of the metal oxide film is closer to a vacuum level than a conduction band minimum of the oxide semiconductor film is, and wherein the metal oxide film covers a channel region and a side surface of the oxide semiconductor film, and wherein the metal oxide film has a first opening and a second opening reaching the oxide semiconductor film, and wherein the source electrode layer is electrically connected to the oxide semiconductor film through the first opening, and the drain electrode layer is electrically connected to the oxide semiconductor film through the second opening. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a gate electrode layer; a gate insulating film over the gate electrode layer; an oxide semiconductor film that is over the gate insulating film and overlaps the gate electrode layer; a metal oxide film covering a channel region and a side surface of the oxide semiconductor film; and a source electrode layer and a drain electrode layer over the metal oxide film, wherein the metal oxide film is positioned between the source electrode layer and the oxide semiconductor film and between the drain electrode layer and the oxide semiconductor film, wherein the metal oxide film has a first opening and a second opening reaching the oxide semiconductor film, and wherein the source electrode layer is electrically connected to the oxide semiconductor film through the first opening, and the drain electrode layer is electrically connected to the oxide semiconductor film through the second opening. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification