LIGHT EMITTING DEVICE

• US 20150123151A1
• Filed: 01/12/2015
• Published: 05/07/2015
• Est. Priority Date: 06/27/2001
• Status: Abandoned Application

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: HSIEH, Min-Hsun, CHUANG, Kuen-Ru, SUNG, Shu-Wen, LIU, Chia-Cheng, HUANG, Chao-Nien, LU, Chih-Chiang, WEY, Shane-Shyan, JOU, Ming-Jiunn
• Application Number:
  US14/594,761
• Publication Number:
  US 20150123151A1
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.

Claims

1. A light-emitting structure, comprising:

a transparent substrate;

a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface;

a first light-emitting stack formed on the first top surface; and

a first electrode directly formed on the second top surface.

2. The light-emitting structure of claim 1, further comprising a second transparent conductive layer electrically connected to the light-emitting stack.

3. The light-emitting structure of claim 2, wherein the first transparent conductive layer and the second transparent conductive layer comprises a same material.

4. The light-emitting structure of claim 2, further comprising a second electrode formed on the second transparent conductive layer.

5. The light-emitting structure of claim 2, wherein the first light-emitting stack comprises a semiconductor layer with a width equal to that of the second transparent conductive layer.

6. The light-emitting structure of claim 2, wherein the first transparent conductive layer, the second transparent conductive layer or both comprise ITO.

7. The light-emitting structure of claim 1, further comprising a second light-emitting stack formed on the first transparent conductive layer.

8. The light-emitting structure of claim 1, wherein the first transparent conductive layer is a non-semiconductor layer.

9. The light-emitting structure of claim 1, wherein the transparent substrate comprises sapphire, GaP or glass.

10. The light-emitting structure of claim 1, wherein the first light-emitting stack comprises a semiconductor layer with a width less than that of the first transparent conductive layer.

11. The light-emitting structure of claim 1, wherein the first transparent conductive layer is an amorphous layer.

12. The light-emitting structure of claim 1, wherein the first top surface and the second top surface are flat.

13. The light-emitting structure of claim 1, wherein the first transparent conductive layer is a non-epitaxial layer.