MECHANISMS FOR SEMICONDUCTOR DEVICE STRUCTURE
First Claim
Patent Images
1. A semiconductor device structure, comprising:
- a substrate;
a metal gate structure formed over the substrate; and
a funnel shaped hard mask structure formed over the metal gate structure.
1 Assignment
0 Petitions
Accused Products
Abstract
Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a metal gate structure formed over the substrate. The semiconductor device structure further includes a funnel shaped hard mask structure formed over the metal gate structure. In addition, a method for forming the semiconductor device structure is also provided.
-
Citations
25 Claims
-
1. A semiconductor device structure, comprising:
-
a substrate; a metal gate structure formed over the substrate; and a funnel shaped hard mask structure formed over the metal gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 25)
-
-
11. A semiconductor device structure, comprising:
-
a substrate; a metal gate structure formed over the substrate; a funnel shaped hard mask structure formed over the metal gate structure; and a self-aligned contact formed over the substrate, wherein a sidewall of the contact is adjacent to an edge of a top surface of the funnel shaped hard mask structure. - View Dependent Claims (12, 13, 14, 15, 21, 22, 23, 24)
-
-
16-20. -20. (canceled)
Specification