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SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

  • US 20150123231A1
  • Filed: 11/06/2014
  • Published: 05/07/2015
  • Est. Priority Date: 11/07/2013
  • Status: Active Grant
First Claim
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1. A manufacturing method of a semiconductor structure, the manufacturing method comprising:

  • (a) providing a wafer structure having a silicon substrate and a protection layer, wherein an electrical pad on the protection layer is exposed through a concave region of the silicon substrate;

    (b) forming an isolation layer on a sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer;

    (c) forming a redistribution layer on the isolation layer and the electrical pad;

    (d) forming a passivation layer on the redistribution layer;

    (e) patterning the passivation layer to form a first opening therein, thereby exposing the redistribution layer on the surface of the silicon substrate through the first opening;

    (f) forming a first conductive layer on the redistribution layer that is exposed through the first opening; and

    (g) arranging a conductive structure in the first opening, thereby enabling the conductive structure to electrically contact the first conductive layer.

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