SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
First Claim
1. A manufacturing method of a semiconductor structure, the manufacturing method comprising:
- (a) providing a wafer structure having a silicon substrate and a protection layer, wherein an electrical pad on the protection layer is exposed through a concave region of the silicon substrate;
(b) forming an isolation layer on a sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer;
(c) forming a redistribution layer on the isolation layer and the electrical pad;
(d) forming a passivation layer on the redistribution layer;
(e) patterning the passivation layer to form a first opening therein, thereby exposing the redistribution layer on the surface of the silicon substrate through the first opening;
(f) forming a first conductive layer on the redistribution layer that is exposed through the first opening; and
(g) arranging a conductive structure in the first opening, thereby enabling the conductive structure to electrically contact the first conductive layer.
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Accused Products
Abstract
A manufacturing method of a semiconductor structure includes the following steps. A wafer structure having a silicon substrate and a protection layer is provided. An electrical pad on the protection layer is exposed through the concave region of the silicon substrate. An isolation layer is formed on the sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer. A redistribution layer is formed on the isolation layer and the electrical pad. A passivation layer is formed on the redistribution layer. The passivation layer is patterned to form a first opening therein. A first conductive layer is formed on the redistribution layer exposed through the first opening. A conductive structure is arranged in the first opening, such that the conductive structure is in electrical contact with the first conductive layer.
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Citations
16 Claims
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1. A manufacturing method of a semiconductor structure, the manufacturing method comprising:
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(a) providing a wafer structure having a silicon substrate and a protection layer, wherein an electrical pad on the protection layer is exposed through a concave region of the silicon substrate; (b) forming an isolation layer on a sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer; (c) forming a redistribution layer on the isolation layer and the electrical pad; (d) forming a passivation layer on the redistribution layer; (e) patterning the passivation layer to form a first opening therein, thereby exposing the redistribution layer on the surface of the silicon substrate through the first opening; (f) forming a first conductive layer on the redistribution layer that is exposed through the first opening; and (g) arranging a conductive structure in the first opening, thereby enabling the conductive structure to electrically contact the first conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor structure, comprising:
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a silicon substrate having a light sensor and a concave region; a protection layer located on the silicon substrate and covering the light sensor; an electrical pad located on the protection layer and aligned with the concave region; an isolation layer located on a sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer; a redistribution layer located on the isolation layer and the electrical pad; a passivation layer located on the redistribution layer and having a first opening; a first conductive layer located on the redistribution layer that is exposed through the first opening; and a conductive structure located in the first opening and in electrical contact with the first conductive layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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Specification