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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20150126002A1
  • Filed: 01/16/2015
  • Published: 05/07/2015
  • Est. Priority Date: 03/09/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • laminating an oxide film layer and a first-conductive-type semiconductor layer on a second-conductive-type semiconductor layer in order;

    forming an active region in the first-conductive-type semiconductor layer;

    forming an insulating film on the first-conductive-type semiconductor layer;

    forming a first first-conductive-type region by diffusing, based on the position of the active region, a first-conductive-type impurity within a first region of the second-conductive-type semiconductor layer that includes a lower portion of the active region;

    forming a MOS-type transistor in the active region;

    removing the oxide film layer from a predetermined region in which a first electrode, a second electrode and a third electrode of the second-conductive-type semiconductor layer are to be formed;

    forming, in the first first-conductive-type region, a second first-conductive-type region by diffusing the first-conductive-type impurity within the predetermined region from which the oxide film layer has been removed and on which the first electrode is to be formed and, forming a third first-conductive-type region by diffusing the first-conductive-type impurity within the predetermined region on which the third electrode is to be formed;

    forming a second-conductive-type region by diffusing a second-conductive-type impurity within the predetermined region from which the oxide film layer has been removed and in which the second electrode is to be formed; and

    forming the first electrode, the second electrode and the third electrode.

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