METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

• US 20150126018A1
• Filed: 04/19/2013
• Published: 05/07/2015
• Est. Priority Date: 05/16/2012
• Status: Active Grant

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Sato, Ken, Goto, Hirokazu, Shikauchi, Hiroshi, Tsuchiya, Keitaro, Shinomiya, Masaru, Hagimoto, Kazunori
• Granted Patent: US 9,281,187 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/155 Comprising only semiconductor materials H01L29/154 takes precedence
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.

Claims

1-5. -5. (canceled)

6. A method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method comprising:

growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and

growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate,

wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.

7. The method for manufacturing a nitride semiconductor device according to claim 6,

wherein the first and second raw material gas flow rates are set in such a manner that a ratio of the V group element raw material gas relative to the III group element raw material gas becomes suitable for each of the first and second nitride semiconductor layers.

8. The method for manufacturing a nitride semiconductor device according to claim 6,

wherein the V group element raw material gas is an ammonia gas.

9. The method for manufacturing a nitride semiconductor device according to claim 7,

wherein the V group element raw material gas is an ammonia gas.

10. The method for manufacturing a nitride semiconductor device according to claim 6,

wherein a V/III ratio in the step of growing the first nitride semiconductor layer is higher than a V/III ratio in the step of growing the second nitride semiconductor layer.

11. The method for manufacturing a nitride semiconductor device according to claim 7,

wherein a V/III ratio in the step of growing the first nitride semiconductor layer is higher than a V/III ratio in the step of growing the second nitride semiconductor layer.

12. The method for manufacturing a nitride semiconductor device according to claim 8,

wherein a V/III ratio in the step of growing the first nitride semiconductor layer is higher than a V/III ratio in the step of growing the second nitride semiconductor layer.

13. The method for manufacturing a nitride semiconductor device according to claim 9,

wherein a V/III ratio in the step of growing the first nitride semiconductor layer is higher than a V/III ratio in the step of growing the second nitride semiconductor layer.

14. The method for manufacturing a nitride semiconductor device according to claim 6,

wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

15. The method for manufacturing a nitride semiconductor device according to claim 7,

wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

16. The method for manufacturing a nitride semiconductor device according to claim 8,

wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

17. The method for manufacturing a nitride semiconductor device according to claim 9,

wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

18. The method for manufacturing a nitride semiconductor device according to claim 10,

wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

19. The method for manufacturing a nitride semiconductor device according to claim 11,

wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

20. The method for manufacturing a nitride semiconductor device according to claim 12,

wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

21. The method for manufacturing a nitride semiconductor device according to claim 13,

wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.