METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
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Abstract
The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.
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Citations
21 Claims
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1-5. -5. (canceled)
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6. A method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method comprising:
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growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification