MULTI-CELL RESONATOR MICROWAVE SURFACE-WAVE PLASMA APPARATUS
First Claim
1. A plasma processing system for processing semiconductor substrates, comprising:
- a plasma chamber comprising a substrate holder;
a plurality of power transmission elements arranged around the plasma chamber, the power transmission elements comprising;
an interior cavity to propagate microwave frequency electromagnetic waves; and
a gap along the interior cavity that forms an opening between the interior cavity and plasma chamber;
an antenna coupled to the power transmission elements; and
a dielectric component that limits fluid communication between the interior cavity and the plasma chamber.
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Accused Products
Abstract
A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.
23 Citations
20 Claims
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1. A plasma processing system for processing semiconductor substrates, comprising:
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a plasma chamber comprising a substrate holder; a plurality of power transmission elements arranged around the plasma chamber, the power transmission elements comprising; an interior cavity to propagate microwave frequency electromagnetic waves; and a gap along the interior cavity that forms an opening between the interior cavity and plasma chamber; an antenna coupled to the power transmission elements; and a dielectric component that limits fluid communication between the interior cavity and the plasma chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 16, 18, 19)
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9. An apparatus, comprising:
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a plasma processing chamber comprising; a substrate holder that can receive a substrate; a chamber wall comprising a plurality of openings arranged around the substrate holder; one or more dielectric components that cover the openings; one or more power transmission elements that are disposed adjacent to the openings and opposite the one or more dielectric components, the power transmission elements comprising a waveguide cavity that can transmit electromagnetic energy towards the respective opening; and a power source component that provides the electromagnetic energy to the plurality of power transmission elements. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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17. A method, comprising:
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receiving a substrate on a substrate holder in a plasma chamber comprising a plurality of power transmission elements arranged around the substrate holder; providing electromagnetic energy to one or more of the power transmission elements; varying characteristics of the electromagnetic energy using solid state amplifiers for the respective power transmission element, the characteristics comprising power, phase, frequency, or modulation; and generating a plasma within the plasma chamber using the electromagnetic energy. - View Dependent Claims (20)
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Specification