PLANT ILLUMINATION DEVICE AND METHOD FOR DARK GROWTH CHAMBERS
First Claim
1. A dark cavity housing a horticultural lighting fixture, comprising:
- at least one light emitting diode (LED) and/or quantum dot havinga) first spectral characteristics including a peak wavelength at the wavelength of 660 nm, andb) second spectral characteristics with a peak wavelength at the wavelength of 450 nm,wherein the first spectral characteristics have an intensity that is higher than an intensity of the second spectral characteristics.
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Accused Products
Abstract
An improved method to produce artificial light for plant cultivation, an illumination device with a semiconductor light emission solution and device suited for plant cultivation in a greenhouse and/or dark growth chamber environment are described. The best mode is considered to be a lighting device with LEDs that produces an emission spectrum similar to the photosynthetically active radiation (PAR) spectrum in a dark growth chamber. The methods and arrangements allow more precise spectral tuning of the emission spectrum for lights used in plant (310, 311) cultivation. Therefore unexpected improvements in the photomorphogenetic control of plant growth, and further improvements in plant production, especially in dark growth chambers, such as basements, are realized.
11 Citations
20 Claims
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1. A dark cavity housing a horticultural lighting fixture, comprising:
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at least one light emitting diode (LED) and/or quantum dot having a) first spectral characteristics including a peak wavelength at the wavelength of 660 nm, and b) second spectral characteristics with a peak wavelength at the wavelength of 450 nm, wherein the first spectral characteristics have an intensity that is higher than an intensity of the second spectral characteristics. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 18, 19, 20)
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14. A light emitting component of a horticultural light in a dark cavity, comprising:
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a light emitting diode (LED) semiconductor chip; and a light wavelength up-conversion quantum dot or phosphor which is deposited in direct proximity of the LED semiconductor chip, the light wavelength up-conversion quantum dot or phosphor being configured to convert part of light emission energy emitted by the LED semiconductor chip such that the light emitting component is configured to emit two characteristic light emission peaks, the light emitting component being configured to have a) first spectral characteristics including a peak wavelength at the wavelength of 660 nm, and b) second spectral characteristics with a peak wavelength at the wavelength of 450 nm, the first spectral characteristics having an intensity that is higher than an intensity of the second spectral characteristics. - View Dependent Claims (15, 16, 17)
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Specification