CHAMBER CLEANING WHEN USING ACID CHEMISTRIES TO FABRICATE MICROELECTRONIC DEVICES AND PRECURSORS THEREOF

• US 20150128993A1
• Filed: 11/12/2014
• Published: 05/14/2015
• Est. Priority Date: 11/13/2013
• Status: Abandoned Application

• Current Assignee: Tel Fsi, Inc. (Tokyo Electron Limited)
• Original Assignee: TEF FSI Incorporated
• Inventors: Siefering, Kevin L., Berg, Erik R.
• Application Number:
  US14/539,160
• Publication Number:
  US 20150128993A1
• Time in Patent Office: Days
• US Class Current: 134/3
• CPC Class Codes: B08B 9/00 Cleaning hollow articles by methods or apparatus specially adapted thereto B08B6/00 takes precedence
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 2111/44 Multi-step processes
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence

Abstract

The present invention provides treatment strategies that reduce contamination on wafer surfaces that are treated with acid chemistries. The strategies are suitable for use with a wide variety of wafers, including those including sensitive microelectronic features or precursors thereof. These strategies involve a combination of neutralizing and rinsing strategies that quickly and effectively remove residual acid and acid by-products from both the front side of workpiece(s) as well as from other processing chamber surfaces that can be causes of contamination.

Claims

1. A method of cleaning a chamber;

comprising the steps of;

(a) positioning a microelectronic device precursor in a treatment chamber comprising an interior chamber surface that overlies the precursor;

(b) treating the workpiece with an a, acidic composition under conditions such that an acid residue collects on at least a portion of the interior chamber surface overlying the workpiece;

(c) causing a neutralizing composition comprising at least one base to contact acid residue on the interior chamber surface; and

(d) after the neutralizing composition contacts the acid residue, rinsing the interior chamber surface.

3. The method of claim 1, wherein the sprayed acidic composition incorporates one or more ingredients including at least sulfuric acid and/or phosphoric acid.

4. The method of claim 1, wherein the second treatment composition incorporates one or more ingredients including at least ammonia.

5. The method of claim 4, wherein the water soluble salt includes ammonium sulfate.

6. The method of claim 1, wherein the salt comprises a water soluble salt.

7. The method of claim 1, wherein the sprayed acidic composition incorporates one or more ingredients including at least phosphoric acid.

8. The method of claim 1, wherein the sprayed acidic composition incorporates ingredients including at least phosphoric acid and sulfuric acid.

9. The method of claim 1, wherein the interior chamber surface is a lower surface of a barrier structure, wherein step (e) comprises flowing the rinsing liquid onto the interior chamber surface, and wherein the method further comprises using a vacuum to remove the flowing rinsing liquid from the interior chamber surface through one or more passageways in fluid communication with the lower surface.

10. The method of claim 9, wherein at least a portion of the aspiration passageways comprises an array of passageways having a plurality of inlets located proximal to an outer peripheral edge of the lower surface.

11. The method of claim 1, wherein the sprayed acidic composition further comprises an oxidizing agent.

12. The method of claim 11, wherein the sprayed acidic composition is aqueous and the oxidizing agent comprises a peroxide.

13. The method of claim 11, wherein the sprayed acidic composition is aqueous and the the oxidizing agent comprises ozone.

14. The method of claim 1, wherein the sprayed acidic composition has a temperature of at least 80°

C.

15. The method of claim 1, wherein step (b) comprises dispensing water vapor into the chamber.

16. The method of claim 15, wherein step (b) comprises using the water vapor to atomize the acidic composition.

17. The method of claim 15, wherein the acidic composition is dispensed into the chamber through a first array of injection openings located above the precursor, wherein the water vapor is dispensed into the chamber through a second array of injection openings in a manner such that the dispensed acidic composition and water vapor collide and mix in a space above the precursor to form a spray that contacts the precursor;

and wherein the first and second arrays of injection openings are positioned above the precursor

18. The method of claim 17, wherein step (b) further comprises rotating the precursor during at least a portion of the time that the acidic composition and the water vapor are dispensed.

19. The method of claim 1, wherein the interior chamber surface is a lower surface of a barrier structure, wherein step (e) comprises flowing the rinsing liquid onto the interior chamber surface.

20. The method of claim 1, wherein step (3) comprises dispensing the rinsing liquid at a temperature of at least 40°

C.

21. The method of claim 1, wherein step (3) comprises dispensing the rinsing liquid at a temperature of at least 50°

C.

22. The method of claim 1, wherein the interior surface comprises quartz.

23. The method of claim 1, further comprising drying the microelectronic precursor.

2. A method of processing a microelectronic device precursor, comprising the steps of:

(a) positioning a microelectronic device precursor in a treatment chamber comprising an interior chamber surface that overlies the precursor;

(b) treating the workpiece with an acidic composition under conditions such that a portion of the acidic composition collects on at least a portion of the interior chamber surface;

(c) after treating the workpiece with the acidic composition, optionally rinsing the microelectronic precursor with a rinsing liquid without rinsing the interior chamber surface with a rinsing liquid;

(d) prior to rinsing the interior chamber surface with a rinsing liquid, treating the workpiece with a second treatment composition comprising a base in a manner such that a portion of the second treatment composition contacts at least a portion of the acid residue on the interior chamber surface and wherein the contact forms a reaction product on the interior surface comprising a salt;

(e) after a portion of the second treatment composition contacts at least a portion of the acid residue on the interior chamber surface, rinsing the interior surface with a rinsing liquid.

24. A method of cleaning a chamber;

comprising the steps of;

(a) positioning a microelectronic device precursor in a treatment chamber comprising an interior chamber surface that overlies the precursor;

(b) treating the workpiece with an a, acidic composition under conditions such that an acid residue is on at least a portion of the interior chamber surface overlying the workpiece;

(c) causing a composition comprising aqueous ammonia to contact acid residue on the interior chamber surface; and

(d) after the composition contacts the acid residue, rinsing the interior chamber surface.

25. The method of claim 24, wherein the composition comprising aqueous ammonia comprises a weight ratio of water to ammonia in the range from 5:

1 to 100,000;

1.

26. A method of cleaning a chamber;

comprising the steps of;

(a) positioning a microelectronic device precursor in a treatment chamber comprising an interior chamber surface that overlies the precursor;

(b) treating the workpiece with an acidic composition under conditions such that an acid residue collects on at least a portion of the interior chamber surface;

(c) rinsing the interior chamber surface with an aqueous liquid composition comprising aqueous ammonia; and

(d) after rinsing the interior chamber surface, rinsing the workpiece.