ORGANIC-INORGANIC HYBRID TRANSISTOR

• US 20150129864A1
• Filed: 06/04/2014
• Published: 05/14/2015
• Est. Priority Date: 11/08/2013
• Status: Abandoned Application

• Current Assignee: E Ink Holdings Incorporated
• Original Assignee: E Ink Holdings Incorporated
• Inventors: HSU, Cheng-Hang, WU, Hsing-Yi, YEH, Chia-Chun, SHINN, Ted-Hong
• Application Number:
  US14/296,440
• Publication Number:
  US 20150129864A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/51 Insulating materials associated therewith for MIS structures on thin film semiconductor H01L29/4908
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

An organic-inorganic hybrid transistor comprises a flexible substrate, a gate electrode, an organic gate dielectric layer, an oxide semiconductor layer, a first passivation layer, a source electrode and a drain electrode. The gate electrode is disposed on the flexible substrate. The organic gate dielectric layer covers the gate electrode and a portion of the flexible substrate. The oxide semiconductor layer is disposed over the organic gate dielectric layer. The first passivation layer is interposed between and in contact with the oxide semiconductor layer and the organic gate dielectric layer. The source electrode and the drain electrode are respectively connected to different sides of the oxide semiconductor layer.

Claims

1. An organic-inorganic hybrid transistor, comprising:

a flexible substrate;

a gate electrode disposed on the flexible substrate;

an organic gate dielectric layer covering the gate electrode and a portion of the flexible substrate;

an oxide semiconductor layer disposed over the organic gate dielectric layer, wherein the oxide semiconductor layer overlaps the gate electrode when viewed in a direction vertical to the flexible substrate;

a first passivation layer comprising an inorganic material, wherein the first passivation layer is interposed between and in contact with the oxide semiconductor layer and the organic gate dielectric layer; and

a source electrode and a drain electrode respectively connected to two different sides of the oxide semiconductor layer.

2. The organic-inorganic hybrid transistor according to claim 1, wherein the first passivation layer consists essentially of an inorganic material, and comprises at least one material selected from the group consisting of aluminum oxide, silicon oxide, silicon nitride and a combination thereof.

3. The organic-inorganic hybrid transistor according to claim 2, wherein the first passivation layer is about 100 Angstrom (A) to about 1000 Angstrom (A) in thickness.

4. The organic-inorganic hybrid transistor according to claim 1, wherein the first passivation layer comprises a material of sol-gel glass.

5. The organic-inorganic hybrid transistor according to claim 1, wherein the first passivation layer and the oxide semiconductor layer have a substantially identical pattern.

6. The organic-inorganic hybrid transistor according to claim 1, wherein the first passivation layer thoroughly covers the organic gate dielectric layer.

7. The organic-inorganic hybrid transistor according to claim 1, further comprising a second passivation layer disposed on and in contact with the source electrode, the drain electrode and the oxide semiconductor layer, wherein the second passivation layer comprises an inorganic material.

8. The organic-inorganic hybrid transistor according to claim 7, further comprising an organic protective layer covering the second passivation layer.

9. The organic-inorganic hybrid transistor according to claim 7, wherein the second passivation layer comprises at least one material selected from the group consisting of aluminum oxide, silicon oxide, silicon nitride and a combination thereof.

10. The organic-inorganic hybrid transistor according to claim 7, wherein the first passivation layer and the second passivation layer comprise aluminum oxide, and the first passivation layer and the second passivation layer are respectively about 100 Angstrom (A) to about 1000 Angstrom (A) in thickness.

11. An organic-inorganic hybrid transistor, comprising:

a flexible substrate;

a source electrode and a drain electrode disposed on the flexible substrate;

a first passivation layer in contact with and disposed on the source electrode, the drain electrode and the flexible substrate, wherein the first passivation layer has a first opening and a second opening respectively exposing a portion of the source electrode and a portion of the drain electrode;

an oxide semiconductor layer disposed on the first passivation layer, wherein the exposed portion of the source electrode and the exposed portion of the drain electrode are respectively connected to two different sides of the oxide semiconductor layer;

a gate electrode disposed over the oxide semiconductor layer; and

an organic gate dielectric layer interposed between the gate electrode and the oxide semiconductor layer.

12. The organic-inorganic hybrid transistor according to claim 11, further comprising a second passivation layer disposed between the organic gate dielectric layer and the oxide semiconductor layer, wherein the second passivation layer covers the oxide semiconductor layer.