SILICON DBR STRUCTURE-INTEGRATED LIGHT ELEMENT, AND PREPARATION METHOD
First Claim
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1. A silicon distributed Bragg reflector (DBR) structure-integrated light device comprising:
- a bottom reflector layer formed by alternately stacking two semiconductor material layers having different indices of refraction;
an n-type ohmic contact layer formed on an upper surface of the bottom reflector layer;
an active layer formed on an upper surface of the n-type ohmic contact layer and generating light through recombination of electrons and holes injected through at least one oxidizable layer having a current injection hole formed at a center thereof;
a p-type ohmic contact layer formed on an upper surface of the active layer;
a top reflector layer formed on an upper surface of the p-type ohmic contact layer and having a silicon DBR structure in which at least one first silicon layer and at least one second silicon layer having different indices of refraction are alternately stacked; and
n-type and p-type electrodes formed on the upper surfaces of the n-type and p-type ohmic contact layers, respectively,wherein the first silicon layer has a lower index of refraction than the second silicon layer and is obliquely deposited on the p-type ohmic contact layer to have a varying index of refraction by adjusting an inclination of the first silicon layer, and the second silicon layer is deposited perpendicular to a plane of the p-type ohmic contact layer.
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Abstract
The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.
7 Citations
21 Claims
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1. A silicon distributed Bragg reflector (DBR) structure-integrated light device comprising:
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a bottom reflector layer formed by alternately stacking two semiconductor material layers having different indices of refraction; an n-type ohmic contact layer formed on an upper surface of the bottom reflector layer; an active layer formed on an upper surface of the n-type ohmic contact layer and generating light through recombination of electrons and holes injected through at least one oxidizable layer having a current injection hole formed at a center thereof; a p-type ohmic contact layer formed on an upper surface of the active layer; a top reflector layer formed on an upper surface of the p-type ohmic contact layer and having a silicon DBR structure in which at least one first silicon layer and at least one second silicon layer having different indices of refraction are alternately stacked; and n-type and p-type electrodes formed on the upper surfaces of the n-type and p-type ohmic contact layers, respectively, wherein the first silicon layer has a lower index of refraction than the second silicon layer and is obliquely deposited on the p-type ohmic contact layer to have a varying index of refraction by adjusting an inclination of the first silicon layer, and the second silicon layer is deposited perpendicular to a plane of the p-type ohmic contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A silicon distributed Bragg reflector (DBR) structure-integrated light device comprising:
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a bottom reflector layer formed on a substrate by alternately stacking two semiconductor material layers having different indices of refraction; an active layer formed on an upper surface of the bottom reflector layer; a current spreading layer formed on an upper surface of the active layer; an ohmic contact layer formed on an upper surface of the current spreading layer; a top reflector layer formed on an upper surface of the ohmic contact layer and having a silicon DBR structure in which at least one first silicon layer and at least one second silicon layer having different indices of refraction are alternately stacked; an upper electrode formed on an upper surface of the ohmic contact layer; and a lower electrode formed on a lower surface of the substrate, wherein the first silicon layer has a lower index of refraction than the second silicon layer and is obliquely deposited on the ohmic contact layer to have a varying index of refraction by adjusting an inclination of the first silicon layer, and the second silicon layer is deposited perpendicular to a plane of the ohmic contact layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A silicon distributed Bragg reflector (DBR) structure-integrated light device comprising:
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a lower electrode formed on a substrate; an ohmic contact layer formed on upper surface of the lower electrode; a current spreading layer formed on an upper surface of the ohmic contact layer; an active layer formed on an upper surface of the current spreading layer; a reflector layer formed on an upper surface of the active layer and having a silicon DBR structure in which at least one first silicon layer and at least one second silicon layer having different indices of refraction are alternately stacked; and an upper electrode formed on the upper surface of the active layer, wherein the first silicon layer has a lower index of refraction than the second silicon layer and is obliquely deposited on the active layer to have a varying index of refraction by adjusting an inclination of the first silicon layer, and the second silicon layer is deposited perpendicular to a plane of the active layer. - View Dependent Claims (16, 17, 18, 19, 20)
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21-27. -27. (canceled)
Specification