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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND ANNEALING METHOD

  • US 20150132930A1
  • Filed: 04/19/2013
  • Published: 05/14/2015
  • Est. Priority Date: 05/31/2012
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:

  • doping impurities into an impurity diffusion layer forming region in a semiconductor substrate; and

    activating the impurities by performing, on the semiconductor substrate, an annealing treatment including;

    lamp annealing performed by using heating lamps; and

    microwave annealing performed by microwave irradiation.

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