METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND ANNEALING METHOD

• US 20150132930A1
• Filed: 04/19/2013
• Published: 05/14/2015
• Est. Priority Date: 05/31/2012
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Watanabe, Yoshimasa, Shiraga, Kentaro
• Application Number:
  US14/403,566
• Publication Number:
  US 20150132930A1
• Time in Patent Office: Days
• US Class Current: 438/542
• CPC Class Codes: H01L 21/22 Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins

Abstract

A semiconductor device manufacturing method includes: amorphizing the impurity diffusion layer formation region; doping the impurity diffusion layer formation region of the semiconductor substrate with impurities; and performing an annealing treatment including lamp annealing in which a heating lamp is used and microwave annealing in which microwaves are irradiated, on the semiconductor substrate doped with the impurities, for activating the impurities. In addition to activation of the impurity, re-crystallization and removing of crystal defects also take place in the annealing treatment.

Claims

1. A method for manufacturing a semiconductor device, the method comprising:

doping impurities into an impurity diffusion layer forming region in a semiconductor substrate; and

activating the impurities by performing, on the semiconductor substrate, an annealing treatment including;

lamp annealing performed by using heating lamps; and

microwave annealing performed by microwave irradiation.

2. The method of claim 1, wherein the annealing treatment is performed at a temperature in a range of 300°

C. to 600°

C.

3. The method of claim 1, wherein, in the annealing treatment, the microwave annealing is performed after the lamp annealing.

4. The method of claim 1, further comprising, before the doping, amorphizing the impurity diffusion layer forming region,

wherein the amorphized impurity diffusion layer forming region is recrystallized during the annealing treatment.

5. An annealing method for activating impurities after doping the impurities into an impurity diffusion layer forming region in a semiconductor substrate, the annealing method comprising:

lamp annealing performed by using heating lamps; and

microwave annealing performed by microwave irradiation.

6. The annealing method of claim 5, wherein the annealing method is executed at a temperature in a range of 300°

C. to 600°

C.

7. The annealing method of claim 5, wherein the microwave annealing is performed after the lamp annealing.