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METHOD FOR FORMING A FINFET STRUCTURE

  • US 20150132966A1
  • Filed: 12/29/2014
  • Published: 05/14/2015
  • Est. Priority Date: 11/14/2013
  • Status: Abandoned Application
First Claim
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1. A method for forming a FinFET structure, at least comprising the following steps:

  • providing a substrate, a first region and a second region being defined on the substrate, a first fin structure and a second fin structure being disposed on the substrate within the first region and the second region respectively, a first oxide layer covering the first fin structure and the second fin structure;

    forming a first protective layer and a second protective layer entirely on the substrate and the first oxide layer in sequence;

    removing the second protective layer within the first region;

    removing the first protective layer within the first region;

    removing the first oxide layer covering the first fin structure and the second protective layer within the second region;

    removing the first protective layer within the second region after the second protective layer within the second region is removed; and

    forming a second oxide layer covering the first fin structure, wherein the second oxide layer is formed before the first protective layer within the second region is removed.

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