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UNDOPED EPITAXIAL LAYER FOR JUNCTION ISOLATION IN A FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE

  • US 20150137237A1
  • Filed: 11/21/2013
  • Published: 05/21/2015
  • Est. Priority Date: 11/21/2013
  • Status: Abandoned Application
First Claim
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1. A device comprising:

  • a gate structure formed over a finned substrate;

    an embedded source and a drain (S/D) adjacent the gate structure; and

    an undoped epitaxial (epi) layer between the embedded S/D and the gate structure.

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