UNDOPED EPITAXIAL LAYER FOR JUNCTION ISOLATION IN A FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE
First Claim
1. A device comprising:
- a gate structure formed over a finned substrate;
an embedded source and a drain (S/D) adjacent the gate structure; and
an undoped epitaxial (epi) layer between the embedded S/D and the gate structure.
4 Assignments
0 Petitions
Accused Products
Abstract
Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a fin field effect transistor (FinFET)) are provided. Specifically, the FinFET device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source and a drain (S/D) formed adjacent the gate structure and the isolation oxide; and an undoped epitaxial (epi) layer between the embedded S/D and the gate structure. The device may further include an epitaxial (epi) bottom region of the embedded S/D, wherein the epi bottom region is counter doped to a polarity of the embedded S/D, and a set of implanted regions implanted beneath the epi bottom region, wherein the set of implanted regions is doped and the epi bottom region is undoped. In one approach, the embedded S/D comprises P++ doped Silicon Germanium (SiGe) for a p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) and N++ Silicon Nitride (SiN) for a n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET).
-
Citations
20 Claims
-
1. A device comprising:
-
a gate structure formed over a finned substrate; an embedded source and a drain (S/D) adjacent the gate structure; and an undoped epitaxial (epi) layer between the embedded S/D and the gate structure. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A fin field effect transistor (FinFET) device having an undoped epitaxial layer for junction isolation, the FinFET device comprising:
-
a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source and a drain (S/D) formed adjacent the gate structure and the isolation oxide; and an undoped epitaxial (epi) layer formed between the embedded S/D and the gate structure. - View Dependent Claims (8, 9, 10, 11)
-
-
12. A method for forming an undoped epitaxial layer for junction isolation in a fin field effect transistor (FinFET) device, the method comprising:
-
forming a gate structure over a finned substrate; providing an isolation oxide beneath an active fin channel of the gate structure; forming an embedded source and a drain (S/D) adjacent the gate structure and the isolation oxide; and forming an undoped epitaxial (epi) layer between the embedded S/D and the gate structure. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
-
Specification