SYSTEMS AND METHODS FOR PRECISION OPTICAL IMAGING OF ELECTRICAL CURRENTS AND TEMPERATURE IN INTEGRATED CIRCUITS

• US 20150137793A1
• Filed: 12/10/2014
• Published: 05/21/2015
• Est. Priority Date: 06/14/2012
• Status: Active Grant

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: ENGLUND, Dirk R., TRUSHEIM, Matthew E.
• Granted Patent: US 9,568,545 B2
• Time in Patent Office: Days
• US Class Current: 324/96
• CPC Class Codes: G01K 11/00 Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
• CPC Class Codes: G01N 21/64 Fluorescence; Phosphorescence
• CPC Class Codes: G01N 2201/06113 Coherent sources; lasers
• CPC Class Codes: G01R 15/24 using light-modulating devices
• CPC Class Codes: G01R 19/0092 measuring current only all subgroups of G01R19/00 take precedence
• CPC Class Codes: G01R 23/17 with optical or acoustical auxiliary devices
• CPC Class Codes: G01R 31/2851 Testing of integrated circuits [IC] G01R31/317 takes precedence; testing individual devices G01R31/26; testing printed circuits G01R31/2801
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: G01R 31/311 of integrated circuits G01R31/31728 takes precedence

Abstract

Systems and methods for precision optical imaging of electrical currents and temperature in integrated circuits are disclosed herein. In one aspect of the disclosed subject matter, a method for detecting a characteristic of an integrated circuit can include depositing at least one diamond structure, having at least one color center therein, onto a side of the integrated circuit.

Claims

1. A method for detecting a characteristic of an integrated circuit, comprising:

depositing at least one diamond structure, having at least one color center therein, onto a side of the integrated circuit;

applying an electromagnetic pump field to the at least one diamond structure;

monitoring a spin state of the at least one color center by measuring an emission of photons from the at least one color center resulting from the electromagnetic pump field and an electromagnetic radiation of the integrated circuit; and

detecting the characteristic of the integrated circuit based on a correlation between the emission of photons and the characteristic.

2. The method of claim 1, further comprising applying a direct current magnetic field to the at least one color center.

3. The method of claim 1, wherein the characteristic comprises one of a current or a temperature.

4. The method of claim 1, wherein the color center comprises a nitrogen vacancy (NV) center, the monitoring comprising monitoring a positive spin state of the NV center, a ground spin state of the NV center, and a negative spin state of the NV center.

5. The method of claim 1, wherein the characteristic comprises a current, the method further comprising modulating the current at a frequency corresponding to an inverse of an electron spin phase coherence time of the color center.

6. The method of claim 1, wherein the characteristic comprises a current, the method further comprising:

applying a direct current magnetic field to the at least one color center; and

sweeping the direct current magnetic field to shift a magnetic sublevel of the at least one color center by Zeeman effect.

7. The method of claim 1, wherein the characteristic comprises a current, the method further comprising modulating a clock frequency of the integrated circuit.

8. The method of claim 1, further comprising calibrating an internal dipole of the color center.

9. The method of claim 8, the detecting comprising

determining a full vector nature of a magnetic field resulting from the characteristic based on a predetermined correlation between the emission of photons, the internal dipole, and the magnetic field;

and

detecting the characteristic for each layer of a plurality of layers within the integrated circuit based on a predetermined correlation between the magnetic field and the characteristic.

10. The method of claim 1, wherein the at least one diamond structure comprises a plurality of nanodiamonds, the depositing comprising:

solubilizing the nanodiamonds in a solvent; and

depositing the nanodiamonds onto a side of the integrated circuit by one of drop-casting, spin-coating, or atomizing.

11. A system for detecting a characteristic of an integrated circuit, comprising:

a receptacle adapted to receive the integrated circuit;

at least one diamond structure, having at least one color center therein, disposed on a side of the integrated circuit;

an electromagnetic pump field source adapted to apply an electromagnetic pump field to the at least one diamond structure;

a monitoring device, coupled to the receptacle and adapted to monitor a spin state of the at least one color center by measuring an emission of photons from the at least one color center resulting from the electromagnetic pump field and an electromagnetic radiation of the integrated circuit to thereby detect the characteristic of the integrated circuit based on a predetermined correlation between the emission of photons and the characteristic.

12. The system of claim 11, further comprising a direct current magnetic field source, coupled to the receptacle and adapted to apply a direct current magnetic field to the at least one color center.

13. The system of claim 11, further comprising an alternating current magnetic field source, coupled to the receptacle and adapted to apply an alternating current magnetic field to the at least one color center.

14. The system of claim 11, wherein the diamond structure comprises one of a nanodiamond or a bulk diamond crystal.

15. The system of claim 11, wherein the characteristic comprises one of a current or a temperature.

16. The system of claim 11, wherein the color center comprises a nitrogen vacancy (NV) center, and wherein the monitoring device is adapted to monitor an m_s=+1 spin state of the NV center, an m_s=0 spin state of the NV center, and the m_s=−

1 spin state of the NV center.

17. The system of claim 11, wherein the characteristic comprises a current modulated at a frequency between an inverse of an electron spin phase coherence time of the color center and 10 MHz.

18. The system of claim 12, wherein the characteristic comprises a current, the direct current magnetic field source adapted to sweep the direct current magnetic field to shift a magnetic sublevel of the at least one color center by Zeeman effect.

19. The system of claim 11, wherein the characteristic comprises a current, and wherein the integrated circuit has a modulated clock frequency.

20. The system of claim 13, wherein the characteristic comprises a current, the alternating current magnetic field adapted to interfere with the electromagnetic radiation of the integrated circuit.

21. The system of claim 11, the color center including a calibrated internal dipole, and wherein the monitoring device is adapted to detect the characteristic for each layer of a plurality of layers within the integrated circuit based on a predetermined correlation between the emission of photons, the internal dipole, the magnetic field, and the characteristic.