OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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Abstract
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
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Citations
17 Claims
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1. (canceled)
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2. A manufacturing method of a semiconductor device, the method comprising the steps of:
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forming a gate electrode; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film and a pair of electrodes over the gate electrode with the gate insulating film therebetween, the pair of electrodes being in contact with the oxide semiconductor film; forming a microvoid by adding at least one of nitrogen, oxygen, and hydrogen to a part of the oxide semiconductor film; and performing heat treatment at a temperature higher than or equal to 200°
C. and lower than or equal to 700°
C. after forming the microvoid. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9)
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10. A manufacturing method of a semiconductor device, the method comprising the steps of:
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forming an oxide semiconductor film and a pair of electrodes, the pair of electrodes being in contact with the oxide semiconductor film; forming a microvoid by adding at least one of nitrogen, oxygen, and hydrogen to a part of the oxide semiconductor film; forming a gate insulating film over the oxide semiconductor film and the pair of electrodes; forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween; and performing heat treatment at a temperature higher than or equal to 200°
C. and lower than or equal to 700°
C. after forming the gate electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification