SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate;
a plurality of unit MISFET elements formed in a first MISFET formation region of a main surface of the semiconductor substrate and coupled in parallel to each other;
an interconnect line structure formed over the semiconductor substrate and having a first interconnect line layer, and a second interconnect line layer located over the first interconnect line layer; and
a back surface electrode formed over a back surface of the semiconductor substrate opposite to the main surface,wherein each of the unit MISFET elements has a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, and a gate electrode formed over the semiconductor substrate located between the source region and the drain region via a gate insulating film,wherein the first interconnect line layer of the interconnect line structure includes a first source interconnect line, and a first gate interconnect line,wherein the second interconnect line layer of the interconnect line structure includes a second source interconnect line, and a second gate interconnect line,wherein each of the first source interconnect line and the first gate interconnect line has a thickness smaller than a thickness of each of the second source interconnect line and the second gate interconnect line,wherein the respective drain regions of the unit MISFET elements are electrically coupled to the back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate to be electrically coupled to each other,wherein the respective source regions of the unit MISFET elements are electrically coupled to each other via the first source interconnect line and the second source interconnect line,wherein the respective gate electrodes of the unit MISFET elements are electrically coupled to each other via the first gate interconnect line and electrically coupled to the second gate interconnect line via the first gate interconnect line, andwherein the first gate interconnect line extends over the plug.
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Accused Products
Abstract
Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; a plurality of unit MISFET elements formed in a first MISFET formation region of a main surface of the semiconductor substrate and coupled in parallel to each other; an interconnect line structure formed over the semiconductor substrate and having a first interconnect line layer, and a second interconnect line layer located over the first interconnect line layer; and a back surface electrode formed over a back surface of the semiconductor substrate opposite to the main surface, wherein each of the unit MISFET elements has a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, and a gate electrode formed over the semiconductor substrate located between the source region and the drain region via a gate insulating film, wherein the first interconnect line layer of the interconnect line structure includes a first source interconnect line, and a first gate interconnect line, wherein the second interconnect line layer of the interconnect line structure includes a second source interconnect line, and a second gate interconnect line, wherein each of the first source interconnect line and the first gate interconnect line has a thickness smaller than a thickness of each of the second source interconnect line and the second gate interconnect line, wherein the respective drain regions of the unit MISFET elements are electrically coupled to the back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate to be electrically coupled to each other, wherein the respective source regions of the unit MISFET elements are electrically coupled to each other via the first source interconnect line and the second source interconnect line, wherein the respective gate electrodes of the unit MISFET elements are electrically coupled to each other via the first gate interconnect line and electrically coupled to the second gate interconnect line via the first gate interconnect line, and wherein the first gate interconnect line extends over the plug. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device, comprising:
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a semiconductor substrate; a plurality of unit MISFET elements formed in a first MISFET formation region of a main surface of the semiconductor substrate and coupled in parallel to each other; an interconnect line structure formed over the semiconductor substrate and having a first interconnect line layer, and a second interconnect line layer located over the first interconnect line layer; and a back surface electrode formed over a back surface of the semiconductor substrate opposite to the main surface, wherein each of the unit MISFET elements has a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, and a gate electrode formed over the semiconductor substrate located between the source region and the drain region via a gate insulating film, wherein the first interconnect line layer of the interconnect line structure includes a first drain interconnect line, and a first gate interconnect line, wherein the second interconnect line layer of the interconnect line structure includes a second drain interconnect line, and a second gate interconnect line, wherein each of the first drain interconnect line and the first gate interconnect line has a thickness smaller than a thickness of each of the second drain interconnect line and the second gate interconnect line, wherein the respective source regions of the unit MISFET elements are electrically coupled to the back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate to be electrically coupled to each other, wherein the respective drain regions of the unit MISFET elements are electrically coupled to each other via the first drain interconnect line and the second drain interconnect line, wherein the respective gate electrodes of the unit MISFET elements are electrically coupled to each other via the first gate interconnect line and electrically coupled to the second gate interconnect line via the first gate interconnect line, and wherein the first gate interconnect line extends over the plug. - View Dependent Claims (17, 18, 19, 20)
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Specification