METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM

• US 20150146188A1
• Filed: 04/23/2013
• Published: 05/28/2015
• Est. Priority Date: 05/29/2012
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Lyulina, Irina, Bijnen, Franciscus Godefridus Casper, Edart, Remi Daniel Marie, Kiers, Antoine Gaston Marie, Kubis, Michael
• Granted Patent: US 9,454,084 B2
• Time in Patent Office: Days
• US Class Current: 355/77
• CPC Class Codes: G01B 11/14 for measuring distance or clearance between spaced objects or spaced apertures G01B11/26 takes precedence; rangefinders G01C3/00
• CPC Class Codes: G03F 7/70141 Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 9/7046 Strategy, e.g. mark, sensor or wavelength selection

Abstract

A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Claims

1. A method comprising:

a) transferring a first pattern to a substrate, said first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position in the first pattern;

b) measuring a position of each of the N alignment marks and determining an alignment mark displacement for each of the N alignment marks from the respective nominal position by comparing the respective nominal position of an alignment mark with the respective measured position of said alignment mark;

c) fitting a model to the N alignment mark displacements;

d) transferring a second pattern to the substrate using the fitted model in order to align the second pattern with respect to the first pattern;

e) measuring an overlay error by measuring a relative position of the first pattern with respect to the second pattern, wherein said overlay error is representative for a displacement of the second pattern relative to a perfect alignment between first and second pattern;

f) determining a model error for each of the N alignment marks by comparing the position of an alignment mark according to the fitted model with the respective measured position of said alignment mark;

g) comparing the determined model errors with the overlay error; and

h) determining a usefulness of each of the N alignment marks to correct the corresponding overlay error based on the comparison between model errors and overlay error.

2. A method according to claim 1, wherein the first pattern is provided with at least M first overlay marks, wherein each first overlay mark is placed at a predefined position in the first pattern,

wherein the second pattern is provided with second overlay marks corresponding to the at least M first overlay marks, thereby forming pairs of first and second overlay marks,

and wherein the overlay error is measured by measuring the relative position of a first overlay mark with respect to a corresponding second overlay mark.

3. A method according to claim 2, wherein each of the N alignment marks has a corresponding pair of first and second overlay marks, so that each model error has a corresponding overlay error, and wherein comparing the model errors with the overlay error includes comparing the model error with the corresponding overlay error.

4. A method according to claim 3, wherein comparing the model error with the corresponding overlay error includes comparing a magnitude of the model error with a magnitude of the corresponding overlay error, and/or comparing a direction of the model error with a direction of the corresponding overlay error.

5. A method according to claim 4, wherein the model errors and overlay errors are respectively defined as model error vectors and overlay error vectors, and wherein the usefulness of an alignment mark to correct overlay is based on a combination of the cosine of an angle between a model error vector and a corresponding overlay error vector, and/or the ratio between the magnitude of the model error vector and the overlay error vector.

6. A method according to claim 3, wherein the model errors and overlay errors are respectively defined as model error vectors and overlay error vectors, and wherein comparing the model error with the corresponding overlay error includes evaluating a vector difference between a model error vector and a corresponding overlay error vector.

7. A method according to claim 6, wherein the usefulness of an alignment mark to correct overlay is based on the magnitude of the vector difference.

8. A method according to claim 1, wherein the transferring a first pattern, measuring a position, fitting a model, transferring a second pattern, measuring an overlay error, determining a model error and comparing errors are carried out for multiple different substrates, wherein a quality factor is determined for each of the N alignment marks on the multiple substrates, said quality factor being representative for the usefulness of an alignment mark of a particular substrate to correct overlay, and wherein the usefulness of an alignment mark to correct overlay in the determining the usefulness is based on an average and/or standard deviation of the quality factors associated with the same alignment marks across the multiple substrates.

9. A method according to claim 1, wherein the method after determining the usefulness of an alignment mark to correct overlay comprises the step of configuring a lithographic apparatus to perform the transferring a first pattern, measuring a position, fitting a model, and transferring a second pattern,

wherein a model is fitted to the alignment mark displacements using weighed alignment mark displacements as input to the model, said weighing being based on the corresponding usefulness, so that more useful alignment marks have a larger contribution to the fitted model than less useful alignment marks.

10. A method according to claim 9, wherein weighing is carried out using weighing factors, wherein the weighing factor is 1 if a corresponding usefulness is above a certain threshold and zero if a corresponding usefulness is below a certain threshold.

11. A method according to claim 9, wherein the usefulness is determined using a first model fitted to the alignment mark displacements, and wherein subsequently the lithographic apparatus is configured to carry out the transferring a first pattern, measuring a position, fitting a model, and transferring a second pattern using a second model which is more advanced than the first model.

12. A method according to claim 9, wherein while the lithographic apparatus is continuously carrying out the transferring a first pattern, measuring a position, fitting a model, and transferring a second pattern for production purposes, and wherein the measuring an overlay error, determining a model error, comparing the errors and determining the usefulness are regularly carried out to update the usefulness and thus the weighing of the alignment mark displacements inputted to the model.

13. In combination a lithographic apparatus and an overlay measurement system, wherein the lithographic apparatus comprises:

an illumination system configured to condition a radiation beam;

a support constructed to support a patterning device, the patterning device being capable of imparting the radiation with a pattern in its cross-section to form a patterned radiation beam;

a substrate table constructed to hold a substrate;

a projection system configured to project the patterned radiation beam onto a target portion of the substrate;

an alignment system with an alignment sensor, said alignment sensor being configured to measure the position of alignment marks on a substrate, and

a lithographic apparatus control unit configured to control the position of the patterned radiation beam relative to a substrate based on the measured position of the alignment marks on the substrate;

wherein the overlay measurement system comprises an overlay sensor configured to measure a relative position between two patterns on a substrate, and an overlay measurement control unit configured to determine an overlay error based on the measured relative position,

wherein the lithographic apparatus is configured to carry out;

a) transferring a first pattern to a substrate, said first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position in the first pattern;

b) measuring a position of N alignment marks and determining an alignment mark displacement for each of the N alignment marks from the respective nominal position by comparing the respective nominal position of an alignment mark with the respective measured position of said alignment mark;

c) fitting a model to the N alignment mark displacements;

d) transferring a second pattern to the substrate using the fitted model in order to align the second pattern with respect to the first pattern;

and wherein the overlay measurement system is configured to carry out;

e) measuring an overlay error by measuring a relative position of the first pattern with respect to the second pattern, wherein said overlay error is representative for a displacement of the second pattern relative to a perfect alignment between first and second pattern;

f) determining a model error for each of the N alignment marks by comparing the position of an alignment mark according to the fitted model with the respective measured position of said alignment mark;

g) comparing the determined model errors with the overlay error; and

h) determining a usefulness of each of the N alignment marks to correct the corresponding overlay error based on the comparison between model errors and overlay error.

14. The combination of claim 13, wherein the usefulness of the alignment marks determined by the overlay measurement system is provided to the lithographic apparatus control unit, and wherein the lithographic apparatus control unit is configured to carry out the fitting a model by fitting a model to the alignment mark displacements using weighed alignment mark displacements as input to the model, said weighing being based on the corresponding usefulness of the alignment marks, so that more useful alignment marks have a larger contribution to the fitted model than less useful alignment marks.

15. The combination of claim 14, wherein the overlay measurement system is configured to regularly carry out the measuring an overlay error, determining a model error, comparing the determined model errors and determining the usefulness in order to regularly update the usefulness of the alignment marks and thus also the weighing of the alignment mark displacements.