METROLOGY DEVICE AND METROLOGY METHOD THEREOF

• US 20150146841A1
• Filed: 11/27/2013
• Published: 05/28/2015
• Est. Priority Date: 11/27/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: YANG, Chi-Ming, LIN, Su-Horng
• Granted Patent: US 10,460,999 B2
• Time in Patent Office: Days
• US Class Current: 378/1
• CPC Class Codes: G01N 23/02 by transmitting the radiation through the material
• CPC Class Codes: G01N 23/083 the radiation being X-rays
• CPC Class Codes: G01N 23/201 by measuring small-angle scattering
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14

Abstract

A metrology device includes a light source and an image sensor. The light source is configured for providing an X-ray illuminating a wafer. The image sensor is configured for detecting a spatial domain pattern produced when the X-ray illuminating the wafer.

Claims

1. A metrology device, comprising:

a light source for providing an X-ray illuminating a wafer; and

an image sensor for detecting a spatial domain pattern produced when the X-ray illuminating the wafer.

2. The metrology device of claim 1, further comprising:

at least a lens group for focusing the X-ray to the wafer.

3. The metrology device of claim 1, further comprising:

a processor for obtaining the morphology of the wafer according to the detected spatial domain pattern.

4. The metrology device of claim 1, further comprising:

a Fourier'"'"'s transformer for transforming the detected spatial domain pattern into a Fourier frequency domain data; and

a processor for obtaining the morphology of the wafer according to the Fourier frequency domain data.

5. The metrology device of claim 1, further comprising:

a processor for obtaining the morphology of a metal layer of the wafer according to the detected spatial domain pattern.

6. The metrology device of claim 1, further comprising:

a processor for obtaining the morphology of a dielectric layer of the wafer according to the detected spatial domain pattern.

7. The metrology device of claim 1, further comprising:

a processor for obtaining the morphology of a semiconductor layer of the wafer according to the detected spatial domain pattern.

8. The metrology device of claim 1, further comprising:

a processor for obtaining raised source and drain structures of the wafer according to the detected spatial domain pattern.

9. The metrology device of claim 1, further comprising:

a processor for obtaining the morphology of at least one Fin field effect transistor of the wafer according to the detected spatial domain pattern.

10. The metrology device of claim 1, further comprising:

a rotation mechanism for rotating the wafer.

11. A metrology device comprising:

a electromagnetic radiation source for providing electromagnetic radiation having a wavelength in the range of 0.01 to 10 nm illuminating a wafer; and

an image sensor for detecting a spatial domain pattern produced when the electromagnetic radiation illuminating the wafer.

12. The metrology device of claim 11, further comprising:

a lens group disposed between the light source and the image sensor; and

13. The metrology device of claim 11, further comprising:

a Fourier'"'"'s transformer connected to the image sensor; and

a processor connected to the Fourier'"'"'s transformer.

14. A metrology method for measuring the morphology of a wafer, comprising:

providing an X-ray to illuminate a wafer; and

detecting a spatial domain pattern produced when the X-ray illuminating the wafer.

15. The metrology method of claim 14, further comprising:

focusing the X-ray to the wafer.

16. The metrology method of claim 14, further comprising:

obtaining the morphology of the wafer according to the detected spatial domain pattern.

17. The metrology method of claim 14, further comprising:

transforming the detected spatial domain pattern into a Fourier frequency domain data; and

obtaining the morphology of the wafer according to the Fourier frequency domain data.

18. The metrology method of claim 14, further comprising:

rotating the wafer.

19. The metrology method of claim 14, further comprising:

obtaining the morphology of the wafer according to the detected spatial domain pattern.

20. The metrology method of claim 14, further comprising:

obtaining raised source and drain structures of the wafer according to the detected spatial domain pattern.