FLOW PATH MEMBER, AND HEAT EXCHANGER AND SEMICONDUCTOR MANUFACTURING DEVICE USING SAME

• US 20150153116A1
• Filed: 07/29/2013
• Published: 06/04/2015
• Est. Priority Date: 07/27/2012
• Status: Abandoned Application

• Current Assignee: Kyocera Corporation
• Original Assignee: Kyocera Corporation
• Inventors: Fujio, Kazuhiko, Ishimine, Yuusaku, Sekiguchi, Keiichi
• Application Number:
  US14/415,674
• Publication Number:
  US 20150153116A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: F28F 13/06 by affecting the pattern of flow of the heat-exchange media F28F13/003 takes precedence; static flow control means in header boxes F28F9/026
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 137/87153 Plural noncommunicating flow paths

Abstract

There is provided a flow path member including: a first wall section; a second wall section; and a third wall section that is provided between the first wall section and the second wall section. An internal section that is configured by the first wall section, the second wall section, and the third wall section becomes a flow path through which a fluid flows and a plurality of flow path openings of the flow path are arranged in one direction on a cut plane obtained by cutting from the first wall section to the second wall section. Furthermore, one of two adjacent flow path openings is disposed to be more displaced than the other either toward the first wall section side or toward the second wall section side.

Claims

1. A flow path member comprising:

a first wall section;

a second wall section; and

a third wall section that is provided between the first wall section and the second wall section,

wherein an internal section that is configured by the first wall section, the second wall section, and the third wall section becomes a flow path through which a fluid flows and a plurality of flow path openings of the flow path are arranged in one direction on a cut plane obtained by cutting from the first wall section to the second wall section, and

wherein one of two adjacent flow path openings is disposed to be more displaced than the other either toward the first wall section side or toward the second wall section side.

2. The flow path member according to claim 1,

wherein, among all of the plurality of flow path openings on the cut plane, one of two adjacent flow path openings is disposed to be more displaced than the other either toward the first wall section side or toward the second wall section side.

3. The flow path member according to claim 1,

wherein the central portion of at least one of the first wall section and the second wall section that configures the flow path is curved toward the flow path side.

4. The flow path member according to claim 1,

wherein the flow path openings are disposed to be displaced gradually closer either to the first wall section side or to the second wall section side approaching the center than at the opposite ends when all of the plurality of flow path openings on the cut plane are viewed.

5. The flow path member according to claim 1,

wherein the flow path openings are disposed to be displaced toward the first wall section side or toward the second wall section side alternately when all of the plurality of flow path openings on the cut plane are viewed.

6. A heat exchanger comprising:

a metal member that is provided on at least one surface or in at least one interior section of the first wall section and the second wall section of the flow path member according to claim 1.

7. A semiconductor manufacturing device comprising:

a heat exchanger in which a metal member is provided in at least one interior section of the first wall section and the second wall section of the flow path member according to claim 1 and the metal member is an electrode for adsorbing a wafer.