ADDRESS STORAGE CIRCUIT AND MEMORY AND MEMORY SYSTEM INCLUDING THE SAME
First Claim
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1. A memory, comprising:
- a plurality of word lines wherein one or more memory cells are coupled to individual word lines;
an address storage unit suitable for storing an input address corresponding to a first external signal that is received at a random time; and
a control unit suitable for activating a word line corresponding to the input address of the plurality of word lines in response to an active command and refreshing one or more target word lines selected using an address stored in the address storage unit when performing a refresh operation.
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Abstract
A memory including a plurality of word lines to which one or more memory cells are coupled, an address storage unit suitable for storing an input address corresponding to a first external signal that is inputted at a random time, and a control unit suitable for activating a word line corresponding to the input address of the plurality of word lines in response to an active command and refreshing one or more target word lines selected using an address stored in the address storage unit when performing a refresh operation.
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Citations
38 Claims
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1. A memory, comprising:
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a plurality of word lines wherein one or more memory cells are coupled to individual word lines; an address storage unit suitable for storing an input address corresponding to a first external signal that is received at a random time; and a control unit suitable for activating a word line corresponding to the input address of the plurality of word lines in response to an active command and refreshing one or more target word lines selected using an address stored in the address storage unit when performing a refresh operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An address storage circuit for storing an address inputted to a memory, comprising:
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a period signal generation unit suitable for generating a period signal that oscillates in a set cycle; an enable signal generation unit suitable for activating an enable signal, when an external signal is received from an outside of the memory by a first set number of times or more in a state in which the period signal is a first level, and deactivating the enable signal, when the external signal is received by a second set number of times or more in a state in which the period signal is a second level; and a storage unit suitable for storing an address corresponding to an active command when the active command is inputted to the memory in a state in which the enable signal is activated. - View Dependent Claims (16, 17, 18)
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19. An address storage circuit for storing an address inputted to a memory, comprising:
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a first counting information generation unit suitable for generating a first counting information by performing a counting operation in response to a first counting signal; a second counting information generation unit suitable for generating a second counting information by performing a counting operation in response to a second counting signal; and a storage unit suitable for storing an address corresponding to an active command when the active command is received if the first counting information and the second counting information have corresponding values, wherein each of the first counting signal and the second counting signal comprise one or more of the active command, a precharge command, a write command, a read command, a refresh command, an address, data, and a period signal that oscillates in a set cycle. - View Dependent Claims (20, 21, 22)
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23. A memory system, comprising:
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a memory having a plurality of word lines to which one or more memory cells are coupled and an address storage unit for storing an input address corresponding to an active command at a random time and suitable for activating a word line corresponding to the input address of the plurality of word lines in response to the active command and refreshing one or more target word lines selected using an address stored in the address storage unit when performing a refresh operation; and a memory controller suitable for applying a plurality of control signals for controlling an operation of the memory, the control signals comprising the active command, a precharge command, a write command, a read command, a refresh command, the input address, and data. - View Dependent Claims (24, 25, 26, 27, 28, 29)
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30. A memory comprising:
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a plurality of word lines; an address storage unit suitable for storing addresses of word lines activated at first and second sections which are alternately repeated, storing an address which is stored last in the first section as a first address when the second section is started, and updating the first address into an address of a currently activated word line at each active operation in the second section; and a control unit suitable for sequentially refreshing the plurality of word lines during a refresh operation, and refreshing one or more target word lines adjacent to a word line corresponding to the first address during a target refresh operation. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38)
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Specification