SENSING MEMORY CELLS COUPLED TO DIFFERENT ACCESS LINES IN DIFFERENT BLOCKS OF MEMORY CELLS
First Claim
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1. A method of operating a memory device, comprising:
- sensing a target memory cell in a first block of memory cells and a target memory cell in a second block of memory cells concurrently while applying a read voltage to a selected access line coupled to the target memory cell in the first block of memory cells and while applying a read voltage to another selected access line coupled to the target memory cell in the second block of memory cells;
wherein the target memory cell in the first block of memory cells and a memory cell in the second block of memory cells are each selectively coupled to a first data line; and
wherein the target memory cell in the second block of memory cells and a memory cell in the first block of memory cells are each selectively coupled to a second data line.
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Abstract
In an embodiment, a target memory cell in a first block of memory cells of a memory device and a target memory cell in a second block of memory cells of the memory device are sensed concurrently while a read voltage is applied to a selected access line coupled to the target memory cell in the first block of memory cells and while a read voltage is applied to another selected access line coupled to the target memory cell in the second block of memory cells.
16 Citations
47 Claims
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1. A method of operating a memory device, comprising:
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sensing a target memory cell in a first block of memory cells and a target memory cell in a second block of memory cells concurrently while applying a read voltage to a selected access line coupled to the target memory cell in the first block of memory cells and while applying a read voltage to another selected access line coupled to the target memory cell in the second block of memory cells; wherein the target memory cell in the first block of memory cells and a memory cell in the second block of memory cells are each selectively coupled to a first data line; and wherein the target memory cell in the second block of memory cells and a memory cell in the first block of memory cells are each selectively coupled to a second data line. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of operating a memory device, comprising:
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applying a first activation voltage to a first select line in a first block of memory cells that activates first and second select transistors in the first block of memory cells commonly coupled to the first select line, wherein the first select transistor is coupled to a first string of memory cells in the first block of memory cells and to a first data line and the second select transistor is coupled to a second string of memory cells in the first block of memory cells and to a second data line; while applying the first activation voltage, applying a second activation voltage to a second select line in a second block of memory cells that activates third and fourth select transistors in the second block of memory cells commonly coupled to the second select line, wherein the third select transistor is coupled to a third string of memory cells in the second block of memory cells and to the first data line and the fourth select transistor is coupled to a fourth string of memory cells in the second block of memory cells and to the second data line; coupling the first string of memory cells to the first data line while isolating the third string of memory cells from the first data line and while applying the first and second activation voltages; and coupling the fourth string of memory cells to the second data line while isolating the second string of memory cells from the second data line, and while applying the first and second activation voltages; wherein a selector memory cell in the third string of memory cells that is deactivated isolates the third string of memory cells from the first data line and a selector memory cell in the second string of memory cells that is deactivated isolates the second string of memory cells from the second data line. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of operating a memory device, comprising:
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applying a first activation voltage to a first select line in a first block of memory cells that activates first and second select transistors in the first block of memory cells commonly coupled to the first select line, wherein the first select transistor is coupled to a first string of memory cells in the first block of memory cells and to a first data line and the second select transistor is coupled to a second string of memory cells in the first block of memory cells and to a second data line; applying a first voltage to a first selector access line that is commonly coupled to a selector memory cell in the first string of memory cells and a selector memory cell in the second string of memory cells, wherein the first voltage activates the selector memory cell in the first string of memory cells and is insufficient to activate the selector memory cell in the second string of memory cells so that the selector memory cell in the second string of memory cells is deactivated and isolates the second string of memory cells from the second data line, wherein the first string of memory cells is coupled to the first data line through the activated selector memory cell in the first string of memory cells and the activated first select transistor; applying a first read voltage to a selected access line in the first block of memory cells commonly coupled a target memory cell in the first string of memory cells and an untargeted memory cell in the second string of memory cells; sensing the first data line while the first string of memory cells is coupled to the first data line, while the second string of memory cells is isolated from the second data line, and while applying the first read voltage; applying a second activation voltage to a second select line in a second block of memory cells that activates third and fourth select transistors in the second block of memory cells commonly coupled to the second select line, wherein the third select transistor is coupled to a third string of memory cells in the second block of memory cells and to the first data line and the fourth select transistor is coupled to a fourth string of memory cells in the second block of memory cells and to the second data line; applying a second voltage to a second selector access line that is commonly coupled to a selector memory cell in the third string of memory cells and a selector memory cell in the fourth string of memory cells, wherein the second voltage activates the selector memory cell in the fourth string of memory cells and is insufficient to activate the selector memory cell in the third string of memory cells so that the selector memory cell in the third string of memory cells is deactivated and isolates the third string of memory cells from the first data line, wherein the fourth string of memory cells is coupled to the second data line through the activated selector memory cell in the fourth string of memory cells and the activated fourth select transistor; applying a second read voltage to a selected access line in the second block of memory cells commonly coupled a target memory cell in the fourth string of memory cells and an untargeted memory cell in the third string of memory cells; and after sensing the first data line, sensing the second data line while the fourth string of memory cells is coupled to the second data line, while the third string of memory cells is isolated from the first data line, and while applying the second read voltage. - View Dependent Claims (19, 20)
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21. A method of operating a memory device, comprising:
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applying a first voltage to a first selector access line commonly coupled to a first selector memory cell in each of a first string, a second string, a third string, and a fourth string of series-coupled memory cells; applying a second voltage to a second selector access line commonly coupled to a second selector memory cell in each of the first string, the second string, the third string, and the fourth string of series-coupled memory cells while applying the first voltage to the first selector access line; applying a third voltage to a third selector access line commonly coupled to a third selector memory cell in each of the first string, the second string, the third string, and the fourth string of series-coupled memory cells while applying the first voltage to the first selector access line and the second voltage to the second selector access line; and applying a fourth voltage to a fourth selector access line commonly coupled to a fourth selector memory cell in each of the first string, the second string, the third string, and the fourth string of series-coupled memory cells while applying the first voltage to the first selector access line, the second voltage to the second selector access line, and the third voltage to the third selector access line; wherein the first voltage activates the first selector memory cell in each of the first string, the second string, the third string, and the fourth string of series-coupled memory cells; wherein the second voltage activates the second selector memory cell in each of the first string and the third string of series-coupled memory cells and is insufficient to activate the second selector memory cell in each of the second string and the fourth string of series-coupled memory cells so that the second selector memory cell in each of the second string and the fourth string of series-coupled memory cells is deactivated; wherein the third voltage activates the third selector memory cell in each of the first string, the second string, the third string, and the fourth string of series-coupled memory cells; and wherein the fourth voltage activates the fourth selector memory cell in each of the first string and the second string of series-coupled memory cells and is insufficient to activate the fourth selector memory cell in each of the third string and the fourth string of series-coupled memory cells so that the fourth selector memory cell in each of the third string and the fourth string of series-coupled memory cells is deactivated. - View Dependent Claims (22, 23, 24, 25)
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26. A memory device, comprising:
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first and second blocks of memory cells; and a controller; wherein the controller is configured to cause the memory device to sense a target memory cell in the first block of memory cells and a target memory cell in the second block of memory cells concurrently while a read voltage is being applied to a selected access line coupled to the target memory cell in the first block of memory cells and while a read voltage is being applied to another selected access line coupled to the target memory cell in the second block of memory cells; wherein the target memory cell in the first block of memory cells and a memory cell in the second block of memory cells are each selectively coupled to a first data line; and wherein the target memory cell in the second block of memory cells and a memory cell in the first block of memory cells are each selectively coupled to a second data line. - View Dependent Claims (27, 28, 29, 30, 31, 32)
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33. A memory device, comprising:
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first and second blocks of memory cells; and a controller; wherein the controller is configured to cause the memory device to apply a first activation voltage to a first select line in the first block of memory cells that activates first and second select transistors in the first block of memory cells commonly coupled to the first select line, wherein the first select transistor is coupled to a first string of memory cells in the first block of memory cells and to a first data line and the second select transistor is coupled to a second string of memory cells in the first block of memory cells and to a second data line; wherein the controller is configured to cause the memory device to apply a second activation voltage, while the first activation voltage is applied, to a second select line in the second block of memory cells that activates third and fourth select transistors in the second block of memory cells commonly coupled to the second select line, wherein the third select transistor is coupled to a third string of memory cells in the second block of memory cells and to the first data line and the fourth select transistor is coupled to a fourth string of memory cells in the second block of memory cells and to the second data line; wherein the controller is configured to cause the memory device to couple the first string of memory cells to the first data line while the third string of memory cells is isolated from the first data line and while the first and second activation voltages are applied; wherein the controller is configured to cause the memory device to couple the fourth string of memory cells to the second data line while the second string of memory cells is isolated from the second data line, while the first and second activation voltages are being applied, while the first string of memory cells is coupled to the first data line, and while the third string of memory cells is isolated from the first data line; wherein a selector memory cell in the third string of memory cells that is deactivated isolates the third string of memory cells from the first data line and a selector memory cell in the second string of memory cells that is deactivated isolates the second string of memory cells from the second data line. - View Dependent Claims (34, 35, 36, 37)
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38. A memory device, comprising:
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first and second data lines; a first memory block comprising a first string of series-coupled memory cells coupled to a first select transistor coupled to the first data line and a second string of series-coupled memory cells coupled to a second select transistor coupled to the second data line; a second memory block comprising a third string of series-coupled memory cells coupled to a third select transistor coupled to the first data line and a fourth string of series-coupled memory cells coupled to a fourth select transistor coupled to the second data line; a first selector access line in the first memory block commonly coupled to a first selector memory cell in the first string of series-coupled memory cells and a first selector memory cell in the second string of series-coupled memory cells; and a second selector access line in the second memory block commonly coupled to a first selector memory cell in the third string of series-coupled memory cells and a first selector memory cell in the fourth string of series-coupled memory cells; wherein the first selector access line is configured to receive a voltage that activates the first selector memory cell in the first string of series-coupled memory cells and that is insufficient to activate the first selector memory cell in the second string of series-coupled memory cells so that the first selector memory cell in the second string of series-coupled memory cells isolates the second string of series-coupled memory cells from the second data line while the first, second, third and fourth select transistors are activated and while the first string of series-coupled memory cells is coupled to the first data line; and wherein the second selector access line is configured to receive a voltage that activates the first selector memory cell in the fourth string of series-coupled memory cells and that is insufficient to activate the first selector memory cell in the third string of series-coupled memory cells so that the first selector memory cell in the third string of series-coupled memory cells isolates the third string of series-coupled memory cells from the first data line while the first, second, third and fourth select transistors are activated and while the first string of series-coupled memory cells is coupled to the first data line and the fourth string of series-coupled memory cells is coupled to the second data line. - View Dependent Claims (39, 40, 41, 42)
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43. An apparatus, comprising:
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a block of memory cells comprising a plurality of strings of series-coupled memory cells, wherein each of the strings of series-coupled memory cells comprises a set of dummy memory cells responsive to a set of control signals and a set of data memory cells; wherein, in response to the set of control signals having a first set of voltages, reading of data memory cells is enabled for only a first portion of the plurality of strings of series-coupled memory cells; wherein, in response to the set of control signals having a second set of voltages, reading of data memory cells is enabled for only a second portion of the plurality of strings of series-coupled memory cells; and wherein, in response to the set of control signals having a third set of voltages, reading of data memory cells is enabled for the first portion and the second portion of the plurality of strings of series-coupled memory cells. - View Dependent Claims (44, 45, 46, 47)
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Specification