ATOMIC LAYER DEPOSITION OF SILICON CARBON NITRIDE BASED MATERIALS
First Claim
1. A process for depositing a silicon carbon nitride film on a substrate, the process comprising a plurality of complete deposition cycles, each complete deposition cycle comprising a SiN sub-cycle and a SiCN sub-cycle,wherein the SiN sub-cycle comprises alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor;
- wherein the SiCN sub-cycle comprises alternately and sequentially contacting the substrate with a precursor comprising silicon and carbon and a SiCN sub-cycle nitrogen precursor.
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Abstract
A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.
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Citations
21 Claims
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1. A process for depositing a silicon carbon nitride film on a substrate, the process comprising a plurality of complete deposition cycles, each complete deposition cycle comprising a SiN sub-cycle and a SiCN sub-cycle,
wherein the SiN sub-cycle comprises alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor; wherein the SiCN sub-cycle comprises alternately and sequentially contacting the substrate with a precursor comprising silicon and carbon and a SiCN sub-cycle nitrogen precursor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of treating a silicon carbon nitride film, comprising:
exposing the silicon carbon nitride film to a hydrogen-containing plasma. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A process for forming a silicon carbon nitride film, comprising:
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depositing the silicon carbon nitride film on a substrate; exposing the silicon carbon nitride film to a hydrogen-containing plasma. - View Dependent Claims (20, 21)
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Specification