Methods Of Selective Layer Deposition
First Claim
1. A method of selective layer deposition, the method comprising:
- providing a substrate comprising a first substrate surface and a second substrate surface;
depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and
thenetching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.
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Accused Products
Abstract
Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.
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Citations
20 Claims
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1. A method of selective layer deposition, the method comprising:
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providing a substrate comprising a first substrate surface and a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and
thenetching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of selective atomic layer deposition of cobalt, the method comprising:
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providing a substrate having a first substrate surface comprising cobalt and a second substrate surface comprising a dielectric; exposing the first and second substrate surface to a precursor comprising Co(TMSA)2(THF) to provide a first layer consisting essentially of cobalt over the first and second substrate surfaces, wherein the first layer consisting essentially of cobalt has a greater thickness over the first substrate than the second substrate; and exposing the first layer consisting essentially of cobalt over the first and second substrate surfaces to a compound having a structure represented by formula (I); - View Dependent Claims (18, 19)
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20. A method of processing a substrate comprising:
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laterally moving a substrate having a first substrate surface and second substrate surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas, a second gas outlet to deliver a second reactive gas and a third gas outlet to deliver a third reactive gas; delivering the first reactive gas comprising Co(TMSA)2(THF) to the first and second substrate surfaces to form a first reactive layer on the first and second substrate surfaces; laterally moving the substrate from a first processing region adjacent the first gas outlet to a second processing region adjacent the second gas outlet; delivering the second reactive gas comprising ammonia to the first and second substrate surfaces to react with the first reactive layer to form a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; laterally moving the substrate from the second processing region to a third processing region adjacent the third gas outlet; and delivering the third reactive gas comprising TMEDA to the first and second substrate surfaces to etch the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.
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Specification