Spacers with Rectangular Profile and Methods of Forming the Same
First Claim
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1. A method comprising:
- forming a spacer layer on a top surface and sidewalls of a patterned feature, wherein the patterned feature is overlying a base layer;
forming a protection layer contacting a top surface and a sidewall surface of the spacer layer;
removing horizontal portions of the protection layer, wherein vertical portions of the protect layer remain after the removing; and
etching the spacer layer to remove horizontal portions of the spacer layer, wherein vertical portions of the spacer layer remain to form parts of spacers.
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Abstract
A method includes forming a spacer layer on a top surface and sidewalls of a patterned feature, wherein the patterned feature is overlying a base layer, A protection layer is formed to contact a top surface and a sidewall surface of the spacer layer. The horizontal portions of the protection layer are removed, wherein vertical portions of the protect layer remain after the removal. The spacer layer is etched to remove horizontal portions of the spacer layer, wherein vertical portions of the spacer layer remain to form parts of spacers.
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Citations
20 Claims
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1. A method comprising:
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forming a spacer layer on a top surface and sidewalls of a patterned feature, wherein the patterned feature is overlying a base layer; forming a protection layer contacting a top surface and a sidewall surface of the spacer layer; removing horizontal portions of the protection layer, wherein vertical portions of the protect layer remain after the removing; and etching the spacer layer to remove horizontal portions of the spacer layer, wherein vertical portions of the spacer layer remain to form parts of spacers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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forming a spacer layer on a top surface and sidewalls of a patterned feature, wherein the patterned feature is overlying a base layer; reacting a surface layer of the spacer layer with a process gas to generate a protection layer, wherein a bottom layer of the spacer layer remains un-reacted with the process gas; removing horizontal portions of the protection layer using a first etchant gas, wherein vertical portions of the protect layer remain after the removing; and etching the spacer layer to remove horizontal portions of the spacer layer using a second etchant gas different from the first etchant gas, wherein vertical portions of the spacer layer remain to form parts of spacers. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A device comprising:
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a semiconductor substrate; a gate stack over the semiconductor substrate; a gate spacer on a sidewall of the gate stack, wherein the gate spacer comprises; an inner portion having an inner sidewall contacting a sidewall of the gate stack; and an outer portion comprising; an inner edge contacting an outer edge of the inner portion, wherein the inner portion and the outer portion comprise different materials, and wherein the out portion has a substantially uniform thickness; and a bottom surface over and spaced apart from the semiconductor substrate; and a source/drain region adjacent to the gate spacer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification