SEMICONDUCTOR DEVICE
First Claim
Patent Images
1. A semiconductor device comprising:
- an oxide semiconductor film;
a gate electrode over the oxide semiconductor film;
a gate insulating film between the oxide semiconductor film and the gate electrode; and
a nitride insulating film over and in contact with the oxide semiconductor film,wherein the oxide semiconductor film comprises a first region and a second region,wherein the first region is in contact with the gate insulating film,wherein the second region is in contact with the nitride insulating film,wherein the second region contains an impurity element other than hydrogen,wherein a concentration of the impurity element in the second region is higher than a concentration of the impurity element in the first region, andwherein the nitride insulating film contains one of silicon nitride and silicon nitride oxide.
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Abstract
A semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film with a gate insulating film therebetween, a nitride insulating film in contact with the oxide semiconductor film, and a conductive film in contact with the oxide semiconductor film. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the conductive film. The second region contains an impurity element. The impurity element concentration of the second region is different from that of the first region.
44 Citations
19 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film; a gate electrode over the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; and a nitride insulating film over and in contact with the oxide semiconductor film, wherein the oxide semiconductor film comprises a first region and a second region, wherein the first region is in contact with the gate insulating film, wherein the second region is in contact with the nitride insulating film, wherein the second region contains an impurity element other than hydrogen, wherein a concentration of the impurity element in the second region is higher than a concentration of the impurity element in the first region, and wherein the nitride insulating film contains one of silicon nitride and silicon nitride oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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an oxide semiconductor film over an oxide insulating film; a gate electrode overlapping the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; a nitride insulating film in contact with the oxide semiconductor film; and a conductive film in contact with the oxide semiconductor film, wherein the oxide semiconductor film comprises a first region and a second region, wherein the first region is in contact with the gate insulating film, wherein the second region is in contact with the nitride insulating film and the conductive film, wherein the second region contains an impurity element other than hydrogen, wherein a concentration of the impurity element in the second region is higher than a concentration of the impurity element in the first region, and wherein the gate electrode has a taper shape. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification