SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20150162493A1
• Filed: 07/01/2013
• Published: 06/11/2015
• Est. Priority Date: 06/29/2012
• Status: Abandoned Application

• Current Assignee: Intellectual Discovery Co., Ltd.
• Original Assignee: Intellectual Discovery Co., Ltd.
• Inventors: Ahn, Do-Yeol
• Application Number:
  US14/411,805
• Publication Number:
  US 20150162493A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A semiconductor light emitting device capable of enhancing light emitting efficiency is disclosed. The semiconductor light emitting device includes an n-type semiconductor layer, a quantum well layer, a barrier layer and a p-type semiconductor layer. The quantum well layer is formed on the n-type semiconductor layer. The barrier layer is formed on the quantum well layer. The p-type semiconductor layer is formed on the barrier layer. The barrier layer includes at least one p-type delta doping layer.

Claims

1. A semiconductor light emitting device comprising:

an n-type semiconductor layer;

a quantum well layer formed on the n-type semiconductor layer;

a barrier layer formed on the quantum well layer; and

a p-type semiconductor layer formed on the barrier layer,

wherein the barrier layer includes at least one p-type delta doping layer.

2. The semiconductor light emitting device of claim 1, wherein the p-type delta doping layer is formed such that the p-type delta doping layer is adjacent to the quantum well layer.

3. The semiconductor light emitting device of claim 1, wherein the n-type semiconductor layer, the quantum well layer, the barrier layer and the p-type semiconductor layer comprises at least one of GaN, InGaN, AlInGaN and AlGaN.

4. The semiconductor light emitting device of claim 1, further comprising at least one electron blocking layer formed between the barrier layer and the p-type semiconductor layer.

5. The semiconductor light emitting device of claim 4, wherein the p-type delta doping layer is spaced apart from the electron blocking layer by at least 10 nm.

6. The semiconductor light emitting device of claim 4, wherein the electron blocking layer comprises at least one p-type delta doping layer.

7. The semiconductor light emitting device of claim 4, wherein the electron blocking layer comprises at least one of AlGaNSb and AlGaNAs.

8. The semiconductor light emitting device of claim 7, wherein a composition ratio of aluminum (Al) in AlGaNSb and AlGaNAs is in a range of 0.3 to 0.8, and a composition ratio of antimony (Sb) and arsenic (As) in AGaNSb and AlGaNAs, respectively is in a range of 0.01 to 0.1.

9. A semiconductor light emitting device comprising:

a substrate;

an n-type semiconductor layer formed on the substrate;

a quantum well layer formed on the n-type semiconductor layer;

a barrier layer formed on the quantum well layer;

an electron blocking layer formed on the barrier layer; and

a p-type semiconductor layer formed on the electron blocking layer,

wherein the electron blocking layer includes at least one p-type delta doping layer.

10. The semiconductor light emitting device of claim 9, wherein the n-type semiconductor layer, the quantum well layer, the barrier layer and the p-type semiconductor layer comprises at least one of GaN, InGaN, AlInGaN and AlGaN.

11. The semiconductor light emitting device of claim 9, wherein the barrier layer comprises at least one of p-type delta doping layer.

12. The semiconductor light emitting device of claim 11, wherein the p-type delta doping layer in the barrier layer is formed such that the p-type delta doping layer is adjacent to the quantum well layer.

13. The semiconductor light emitting device of claim 11, wherein the p-type delta doping layer in the barrier layer is spaced apart from the electron blocking layer by at least 10 nm.

14. The semiconductor light emitting device of claim 9, wherein the electron blocking layer comprises at least one of AlGaNSb and AlGaNAs.

15. The semiconductor light emitting device of claim 14, wherein a composition ratio of aluminum (Al) in AlGaNSb and AlGaNAs is in a range of 0.3 to 0.8, and a composition ratio of antimony (Sb) and arsenic (As) in AlGaNSb and AlGaNAs, respectively is in a range of 0.01 to 0.1.