SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS INCLUDING UNIFORMITY BAFFLES

• US 20150167168A1
• Filed: 12/18/2014
• Published: 06/18/2015
• Est. Priority Date: 12/18/2013
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Keshavamurthy, Arun, van Schravendijk, Bart, Cohen, David
• Granted Patent: US 10,351,955 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45591 Fixed means, e.g. wings, baffles
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: Y10T 29/4943 Plumbing fixture making

Abstract

A semiconductor substrate processing apparatus for processing semiconductor substrates includes showerhead module delivering process gas through a faceplate having gas passages therethrough from the process gas source to a processing zone of the processing apparatus wherein individual semiconductor substrates are processed. The showerhead module comprises a gas delivery conduit in fluid communication with a cavity at a lower end thereof, a baffle arrangement in the gas delivery conduit and the cavity, and a blocker plate in the cavity disposed below the baffle arrangement. The baffle arrangement comprises baffles which divide process gas flowing through the gas delivery conduit into center, inner annular, and outer annular flow streams. The center flow stream exits the baffle arrangement above a central portion of the faceplate, the inner annular flow stream exits the baffle arrangement above an inner annular region of the faceplate, and the outer annular flow stream exits the baffle arrangement above an outer annular region of the faceplate.

Claims

1. A semiconductor substrate processing apparatus for processing semiconductor substrates comprising:

a chemical isolation chamber in which semiconductor substrates are processed;

a process gas source in fluid communication with the chemical isolation chamber for supplying a process gas into the chemical isolation chamber;

a showerhead module which delivers process gas through a faceplate having gas passages therethrough from the process gas source to a processing zone of the processing apparatus wherein individual semiconductor substrates are processed, the showerhead module comprising a gas delivery conduit in fluid communication with a cavity at a lower end thereof, a baffle arrangement in the gas delivery conduit and the cavity, and a blocker plate in the cavity disposed below the baffle arrangement wherein the baffle arrangement comprises;

baffles which divide process gas flowing through the gas delivery conduit into center, inner annular, and outer annular flow streams, the center flow stream exiting the baffle arrangement after being deflected by the blocker plate and directed radially outward above a central portion of the faceplate, the inner annular flow stream exiting the baffle arrangement above an inner annular region of the faceplate, and the outer annular flow stream exiting the baffle arrangement above an outer annular region of the faceplate; and

a substrate pedestal module adjacent the faceplate of the showerhead module which is configured to support the substrate in the processing zone below the faceplate during processing of the substrate.

2. The semiconductor substrate processing apparatus of claim 1, wherein the baffle arrangement comprises:

a first baffle which includes a vertically extending inner tube in the gas delivery conduit and a lower annular disc extending horizontally outward from a lower end of the inner tube in the cavity; and

a second baffle which includes a vertically extending outer tube in the gas delivery conduit and an upper annular disc extending horizontally outward from a lower end of the outer tube in the cavity wherein an outer diameter of the upper annular disc is greater than an outer diameter of the lower annular disc;

wherein a diameter of the inner tube in fluid communication with a first gap between the blocker plate and the lower annular disc, a second gap between the inner tube and the outer tube in fluid communication with a third gap between the lower annular disc and the upper annular disc, and a fourth gap between the outer tube and a wall of the gas delivery conduit in fluid communication with a fifth gap between the upper annular disc and an upper wall of the cavity provide different flow rates of process gas into the cavity at different radial locations thereof such that a uniform concentration of process gas is delivered through the faceplate, that forms a lower wall of the cavity, to a processing zone above an upper surface of a semiconductor substrate.

3. The semiconductor substrate processing apparatus of claim 1, wherein the semiconductor substrate processing apparatus includes:

(a) an RF energy source adapted to energize the process gas into a plasma state in the processing zone;

(b) a control system configured to control processes performed by the processing apparatus;

(c) a non-transitory computer machine-readable medium comprising program instructions for control of the processing apparatus; and

/or

(d) a vacuum source in fluid communication with the processing zone for evacuating process gas from the processing zone.

4. The semiconductor substrate processing apparatus of claim 1, wherein a backing plate forms the upper wall of the cavity.

5. The semiconductor substrate processing apparatus of claim 1, further comprising a single mass flow controller which is operable to control the flow rate of the process gas entering the gas delivery conduit.

6. The semiconductor substrate processing apparatus of claim 2, wherein the outer diameter of the upper annular disc and the outer diameter of the lower annular disc are about 0.3 to 0.95 times an outer diameter of the faceplate.

7. The semiconductor substrate processing apparatus of claim 2, wherein:

(a) the upper annular disc and the lower annular disc are parallel to the faceplate; and

/or

(b) the outer tube and the inner tube are coaxial with the gas delivery conduit.

8. The semiconductor substrate processing apparatus of claim 1, wherein the gas delivery conduit forms a stem of the showerhead module and the cavity is disposed in a base of the showerhead module wherein the stem is connected to the base.

9. The semiconductor substrate processing apparatus of claim 1, wherein the baffle arrangement comprises a plurality of concentric baffles including an inner baffle, one or more intermediate baffles, and an outer baffle wherein each baffle divides process gas delivered into the gas delivery conduit into inner and outer flow streams such that the plurality of concentric baffles divide process gas flowing through the conduit into the center annular flow stream, at least two inner annular flow streams, and the outer annular flow stream, the center flow stream exiting the baffles and directed radially outward above the central portion of the faceplate, the inner annular flow streams exiting the baffles at different radial locations above the inner annular region of the faceplate, and the outer annular flow stream exiting the baffles above the outer annular region of the faceplate.

20. A method of processing a semiconductor substrate in the semiconductor substrate processing apparatus according to claim 1, comprising:

supplying the process gas from the process gas source into the processing zone; and

processing a semiconductor substrate in the processing zone;

wherein the processing is at least one of chemical vapor deposition;

plasma-enhanced chemical vapor deposition;

atomic layer deposition;

plasma-enhanced atomic layer deposition;

pulsed deposition layer;

molecular layer deposition;

etching;

resist removal; and

/or plasma enhanced pulsed deposition layer.

10. A showerhead module of a semiconductor substrate processing apparatus which delivers process gas through a faceplate having gas passages therethrough from a process gas source to a processing zone of the processing apparatus wherein individual semiconductor substrates are processed comprises:

a gas delivery conduit in fluid communication with a cavity at a lower end thereof;

a baffle arrangement in the gas delivery conduit and the cavity; and

a blocker plate in the cavity disposed below the baffle arrangement;

wherein the baffle arrangement comprises;

baffles which divide process gas flowing through the gas delivery conduit into center, inner annular, and outer annular flow streams, the center flow stream exiting the baffle arrangement after being deflected by the blocker plate and directed radially outward above a central portion of the faceplate, the inner annular flow stream exiting the baffle arrangement above an inner annular region of the faceplate, and the outer annular flow stream exiting the baffle arrangement above an outer annular region of the faceplate.

11. The showerhead module of claim 10, wherein the baffle arrangement comprises:

a first baffle which includes a vertically extending inner tube in the gas delivery conduit and a lower annular disc extending horizontally outward from a lower end of the inner tube in the cavity; and

a second baffle which includes a vertically extending outer tube in the gas delivery conduit and an upper annular disc extending horizontally outward from a lower end of the outer tube in the cavity wherein an outer diameter of the upper annular disc is greater than an outer diameter of the lower annular disc;

wherein a diameter of the inner tube in fluid communication with a first gap between the blocker plate and the lower annular disc, a second gap between the inner tube and the outer tube in fluid communication with a third gap between the lower annular disc and the upper annular disc, and a fourth gap between the outer tube and a wall of the gas delivery conduit in fluid communication with a fifth gap between the upper annular disc and an upper wall of the cavity provide different flow rates of process gas into the cavity at different radial locations thereof such that a uniform concentration of process gas is delivered through the faceplate, that forms a lower wall of the cavity, to a processing zone above an upper surface of a semiconductor substrate.

12. The showerhead module of claim 10, wherein a backing plate forms the upper wall of the cavity.

13. The showerhead module of claim 11, wherein the outer diameter of the upper annular disc and the outer diameter of the lower annular disc are about 0.3 to 0.95 times an outer diameter of the faceplate.

14. The showerhead module of claim 11, wherein

(a) the upper annular disc and the lower annular disc are parallel to the faceplate;

and/or

(b) the outer tube and the inner tube are coaxial with the gas delivery conduit.

15. The showerhead module of claim 11, wherein the gas delivery conduit forms a stem of the showerhead module and the cavity is disposed in a base of the showerhead module wherein the stem is connected to the base.

16. The showerhead module of claim 10, wherein the baffle arrangement comprises a plurality of concentric baffles including an inner baffle, one or more intermediate baffles, and an outer baffle wherein each baffle divides process gas delivered into the gas delivery conduit into inner and outer flow streams such that the plurality of concentric baffles divide process gas flowing through the conduit into the center annular flow stream, at least two inner annular flow streams, and the outer annular flow stream, the center flow stream exiting the baffles and directed radially outward above the central portion of the faceplate, the inner annular flow streams exiting the baffles at different radial locations above the inner annular region of the faceplate, and the outer annular flow stream exiting the baffles above the outer annular region of the faceplate.

17. A method of forming the showerhead module of claim 11, comprising coaxially supporting the inner tube and the outer tube in the gas delivery conduit of the showerhead module.

18. The method of claim 17, and supporting the upper annular disc and the lower annular disc parallel to the faceplate.

19. The method of claim 17, further comprising:

(a) selecting the diameter of the inner tube, and dimensions of the first, second, third, fourth, and fifth gap such that the concentration uniformity of process gas delivered to an upper surface of a substrate configured to be supported below the faceplate has less than a 12% variation across the upper surface;

or

(b) selecting the diameter of the inner tube, and dimensions of the first, second, third, fourth, and fifth gap such that the concentration uniformity of process gas delivered to an upper surface of a substrate configured to be supported below the faceplate has less than an 8% variation across the upper surface.