SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR
First Claim
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1. A method for producing a SiC single crystal by a solution process in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—
- C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to cause crystal growth of the SiC single crystal, the method comprisinglowering the temperature of the Si—
C solution at the outer peripheral section directly below the interface with the crystal growth plane to be lower than the temperature of the Si—
C solution at the center section directly below the interface with the crystal growth plane, and causing the Si—
C solution to flow from the center section directly below the interface with the crystal growth plane to the outer peripheral section directly below the interface with the crystal growth plane.
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Abstract
Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, the growth crystal having a recessed crystal growth surface and not including inclusions.
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Citations
13 Claims
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1. A method for producing a SiC single crystal by a solution process in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—
- C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to cause crystal growth of the SiC single crystal, the method comprising
lowering the temperature of the Si—
C solution at the outer peripheral section directly below the interface with the crystal growth plane to be lower than the temperature of the Si—
C solution at the center section directly below the interface with the crystal growth plane, and causing the Si—
C solution to flow from the center section directly below the interface with the crystal growth plane to the outer peripheral section directly below the interface with the crystal growth plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to cause crystal growth of the SiC single crystal, the method comprising
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9. An apparatus for production of a SiC single crystal by a solution process in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—
- C solution heated so as to have a temperature gradient such that the temperature decreases from the interior toward the surface, to cause crystal growth of the SiC single crystal from the seed crystal substrate, the apparatus comprising;
a crucible that houses a Si—
C solution,a heating device situated surrounding the crucible, and a seed crystal holding shaft situated in a movable manner in the up-down direction, the apparatus further comprising; a temperature control means that lowers the temperature of the Si—
C solution at the outer peripheral section directly below the interface with the crystal growth plane to be lower than the temperature of the Si—
C solution at the center section directly below the interface with the crystal growth plane, anda flow means that causes the Si—
C solution to flow from the center section directly below the interface with the crystal growth plane to the outer peripheral section directly below the interface with the crystal growth plane,wherein the temperature control means comprises the seed crystal holding shaft, and the seed crystal holding shaft has a hollow part in the center section and a heat-insulating material in at least part of the hollow part so that the seed crystal holding shaft has higher thermal conductivity at the side sections than at the center section; and wherein the flow means comprises a rotating device for a rotating the seed crystal substrate for mechanical stirring of the Si—
C solution, and/orthe heating device comprises a high-frequency heating device for high-frequency heating the Si—
C solution and the flow means comprises the high-frequency heating device for electrical magnetic stirring of the Si—
C solution.
- C solution heated so as to have a temperature gradient such that the temperature decreases from the interior toward the surface, to cause crystal growth of the SiC single crystal from the seed crystal substrate, the apparatus comprising;
- 10. A SiC single crystal ingot containing a seed crystal substrate and a SiC grown crystal grown from the seed crystal substrate by using a solution process, wherein the grown crystal has a concave crystal growth plane and contains no inclusions.
Specification