PLASMA PROCESSING APPARATUS AND COMPONENT THEREOF INCLUDING AN OPTICAL FIBER FOR DETERMINING A TEMPERATURE THEREOF
First Claim
1. A plasma processing apparatus for processing semiconductor substrates, comprising:
- a plasma processing chamber in which a semiconductor substrate is processed;
a process gas source in fluid communication with the plasma processing chamber adapted to supply process gas into the plasma processing chamber;
a RF energy source adapted to energize the process gas into a plasma state in the plasma processing chamber;
a vacuum source adapted to exhaust process gas and byproducts of the plasma processing from the plasma processing chamber; and
at least one component comprising a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber.
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Abstract
A plasma processing apparatus for processing semiconductor substrates comprises a plasma processing chamber in which a semiconductor substrate is processed. A process gas source is in fluid communication with the plasma processing chamber and is adapted to supply a process gas into the plasma processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the plasma processing chamber. Process gas and byproducts of the plasma processing are exhausted from the plasma processing chamber through a vacuum port. At least one component of the plasma processing apparatus comprises a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber.
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Citations
20 Claims
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1. A plasma processing apparatus for processing semiconductor substrates, comprising:
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a plasma processing chamber in which a semiconductor substrate is processed; a process gas source in fluid communication with the plasma processing chamber adapted to supply process gas into the plasma processing chamber; a RF energy source adapted to energize the process gas into a plasma state in the plasma processing chamber; a vacuum source adapted to exhaust process gas and byproducts of the plasma processing from the plasma processing chamber; and at least one component comprising a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber. - View Dependent Claims (2, 3, 4, 5, 6, 18, 19, 20)
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- 7. A component of a plasma processing apparatus comprising a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, wherein the laterally extending optical fiber is configured to be coupled to a temperature monitoring arrangement such that temperatures at different locations along the optical fiber can be monitored.
Specification