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PLASMA PROCESSING APPARATUS AND COMPONENT THEREOF INCLUDING AN OPTICAL FIBER FOR DETERMINING A TEMPERATURE THEREOF

  • US 20150170977A1
  • Filed: 12/16/2013
  • Published: 06/18/2015
  • Est. Priority Date: 12/16/2013
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus for processing semiconductor substrates, comprising:

  • a plasma processing chamber in which a semiconductor substrate is processed;

    a process gas source in fluid communication with the plasma processing chamber adapted to supply process gas into the plasma processing chamber;

    a RF energy source adapted to energize the process gas into a plasma state in the plasma processing chamber;

    a vacuum source adapted to exhaust process gas and byproducts of the plasma processing from the plasma processing chamber; and

    at least one component comprising a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber.

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