ANTIFUSE
First Claim
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1. A semiconductor structure, comprising:
- a first semiconductor layer; and
a first program transistor and a first select transistor implementing a first antifuse cell, wherein the first semiconductor layer acts as the body of the first program transistor and as the body of the first select transistor;
wherein a gate of the first program transistor and a gate of the first select transistor are on different sides of the first semiconductor layer.
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Abstract
The disclosure relates to a semiconductor structure comprising: a first semiconductor layer, a first program transistor, and a first select transistor implementing a first antifuse cell, wherein the first semiconductor layer acts as the body of the first program transistor and as the body of the first select transistor, wherein a gate of the first program transistor and a gate of the first select transistor are on different sides of the first semiconductor layer.
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Citations
14 Claims
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1. A semiconductor structure, comprising:
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a first semiconductor layer; and a first program transistor and a first select transistor implementing a first antifuse cell, wherein the first semiconductor layer acts as the body of the first program transistor and as the body of the first select transistor; wherein a gate of the first program transistor and a gate of the first select transistor are on different sides of the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification