SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a first circuit comprising a first transistor and a second transistor over a substrate; and
a second circuit comprising a third transistor over the substrate;
wherein the first transistor comprises a first oxide semiconductor film, a second oxide semiconductor film and a first gate electrode, the first gate electrode overlapping with the first oxide semiconductor film and the second oxide semiconductor film,wherein the second transistor comprises a third oxide semiconductor film,wherein the third transistor comprises a fourth oxide semiconductor film,wherein the second oxide semiconductor film, the third oxide semiconductor film and the fourth oxide semiconductor film comprise a same material, andwherein the first transistor comprises a first back gate electrode connected to the first gate electrode.
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Abstract
A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
37 Citations
16 Claims
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1. A semiconductor device comprising:
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a first circuit comprising a first transistor and a second transistor over a substrate; and a second circuit comprising a third transistor over the substrate; wherein the first transistor comprises a first oxide semiconductor film, a second oxide semiconductor film and a first gate electrode, the first gate electrode overlapping with the first oxide semiconductor film and the second oxide semiconductor film, wherein the second transistor comprises a third oxide semiconductor film, wherein the third transistor comprises a fourth oxide semiconductor film, wherein the second oxide semiconductor film, the third oxide semiconductor film and the fourth oxide semiconductor film comprise a same material, and wherein the first transistor comprises a first back gate electrode connected to the first gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a first circuit comprising a first transistor and a second transistor over a substrate; and a second circuit comprising a third transistor over the substrate; wherein the first transistor comprises a first oxide semiconductor film, a second oxide semiconductor film and a third oxide semiconductor film stacked in this order and a first gate electrode, the first gate electrode overlapping with the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film, wherein the second transistor comprises a fourth oxide semiconductor film, wherein the third transistor comprises a fifth oxide semiconductor film, wherein the third oxide semiconductor film, the fourth oxide semiconductor film and the fifth oxide semiconductor film comprise a same material, and wherein the first transistor comprises a first back gate electrode connected to the first gate electrode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification