SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
First Claim
1. A semiconductor device comprising:
- a transistor comprising;
a first gate electrode;
an oxide semiconductor film overlapping the first gate electrode;
a gate insulating film between the oxide semiconductor film and the first gate electrode;
a first insulating film over the oxide semiconductor film;
a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film;
a second insulating film over the first insulating film and the pair of electrodes; and
a second gate electrode that is over the second insulating film and overlaps the oxide semiconductor film,wherein the first insulating film includes a region having a thickness greater than or equal to 1 nm and less than or equal to 50 nm, andwherein a distance between the pair of electrodes is greater than or equal to 1 μ
m and less than or equal to 6 μ
m.
2 Assignments
0 Petitions
Accused Products
Abstract
The semiconductor device includes a transistor including an oxide semiconductor film, a first gate electrode overlapping with the oxide semiconductor film, a gate insulating film between the oxide semiconductor film and the first gate electrode, a first insulating film over the oxide semiconductor film, a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film, a second insulating film over the first insulating film and the pair of electrodes, and a second gate electrode that is over the second insulating film and overlaps with the oxide semiconductor film. The first insulating film includes a region having a thickness of 1 nm or more and 50 nm or less, and the pair of electrodes includes a region in which a distance between the electrodes is 1 μm or more and 6 μm or less.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a transistor comprising; a first gate electrode; an oxide semiconductor film overlapping the first gate electrode; a gate insulating film between the oxide semiconductor film and the first gate electrode; a first insulating film over the oxide semiconductor film; a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film; a second insulating film over the first insulating film and the pair of electrodes; and a second gate electrode that is over the second insulating film and overlaps the oxide semiconductor film, wherein the first insulating film includes a region having a thickness greater than or equal to 1 nm and less than or equal to 50 nm, and wherein a distance between the pair of electrodes is greater than or equal to 1 μ
m and less than or equal to 6 μ
m. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a transistor comprising; a first gate electrode; an oxide semiconductor film overlapping the first gate electrode; a gate insulating film between the oxide semiconductor film and the first gate electrode; a first insulating film over the oxide semiconductor film; a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film; a second insulating film over the first insulating film and the pair of electrodes; and a second gate electrode that is over the second insulating film and overlaps the oxide semiconductor film, wherein the first gate electrode and the second gate electrode are connected to each other in an opening in the gate insulating film, the first insulating film, and the second insulating film, and the oxide semiconductor film is surrounded by the first gate electrode and the second gate electrode with the gate insulating film between the oxide semiconductor film and the first gate electrode and with the first insulating film and the second insulating film between the oxide semiconductor film and the second gate electrode, wherein the first insulating film includes a region having a thickness greater than or equal to 1 nm and less than or equal to 50 nm, and wherein a distance between the pair of electrodes is greater than or equal to 1 μ
m and less than or equal to 6 μ
m. - View Dependent Claims (7, 8, 9, 10, 20)
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11. A semiconductor device comprising:
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a transistor comprising; a first gate electrode; a stacked-layer oxide film comprising an oxide semiconductor film and a metal oxide film, the stacked-layer oxide film overlapping the first gate electrode; a gate insulating film between the stacked-layer oxide film and the first gate electrode; a first insulating film over the stacked-layer oxide film; a pair of electrodes that are over the first insulating film and electrically connected to the stacked-layer oxide film; a second insulating film over the first insulating film and the pair of electrodes; and a second gate electrode that is over the second insulating film and overlaps the stacked-layer oxide film, wherein the first insulating film includes a region having a thickness greater than or equal to 1 nm and less than or equal to 50 nm, and wherein a distance between the pair of electrodes is greater than or equal to 1 μ
m and less than or equal to 6 μ
m. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification