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SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

  • US 20150171116A1
  • Filed: 12/11/2014
  • Published: 06/18/2015
  • Est. Priority Date: 12/12/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor comprising;

    a first gate electrode;

    an oxide semiconductor film overlapping the first gate electrode;

    a gate insulating film between the oxide semiconductor film and the first gate electrode;

    a first insulating film over the oxide semiconductor film;

    a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film;

    a second insulating film over the first insulating film and the pair of electrodes; and

    a second gate electrode that is over the second insulating film and overlaps the oxide semiconductor film,wherein the first insulating film includes a region having a thickness greater than or equal to 1 nm and less than or equal to 50 nm, andwherein a distance between the pair of electrodes is greater than or equal to 1 μ

    m and less than or equal to 6 μ

    m.

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