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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

  • US 20150171220A1
  • Filed: 04/26/2013
  • Published: 06/18/2015
  • Est. Priority Date: 05/28/2012
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a TFT which is provided on the substrate and which includes a gate electrode, a semiconductor layer that is arranged to face the gate electrode with a gate insulating film interposed therebetween, and source and drain electrodes that are electrically connected to the semiconductor layer; and

    an insulating layer formed on the source and drain electrodes,wherein the insulating layer includes a lower region which contacts at least partially with the upper surface of the source and drain electrodes and an upper region which is located over the lower region, andthe lower region has a higher hydrogen content than the upper region.

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