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IGZO TRANSISTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

  • US 20150171225A1
  • Filed: 12/17/2013
  • Published: 06/18/2015
  • Est. Priority Date: 12/17/2013
  • Status: Active Grant
First Claim
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1. A manufacturing method for an indium gallium zinc oxide (IGZO) transistor, comprising:

  • forming a source electrode, a drain electrode, and an IGZO layer on a substrate;

    forming a protect layer at a channel of the IGZO layer;

    performing N-type doping to a contact region of the source/drain electrodes and the IGZO layer to form a n+IGZO region through plasma treatment; and

    forming a gate insulation layer and a gate electrode.

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