LED For Plant Illumination

• US 20150171270A1
• Filed: 05/16/2013
• Published: 06/18/2015
• Est. Priority Date: 03/07/2013
• Status: Abandoned Application

• Current Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Original Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Inventors: Lin, Hongliang, Wu, Chaoyu, Huang, Yi-Jui, Wu, Chun-I, Tao, Ching-Shan
• Application Number:
  US14/415,037
• Publication Number:
  US 20150171270A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: A01G 7/045 with electric lighting
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: Y02P 60/14 Measures for saving energy, e.g. in green houses

Abstract

An LED used for plant illumination, comprising a substrate (11), a PN-junction light-emitting part arranged on the substrate (11). The light-emitting part has a strained light-emitting layer with component formula of GaXIn(1−X)AsYP(1−Y) (0<X<1 and 0<Y<1). The light-emitting part has a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer. The structure adopts a new light-emitting material GaXIn(1−X)AsYP(1−Y), which can significantly improve the light-emitting efficiency by 50%-100%.

Claims

1. An LED used for plant illumination, comprising:

a substrate;

a PN junction light-emitting part is arranged on said substrate;

the light-emitting part has a strained light-emitting layer with component formula of GaXIn(1−

X)AsYP(1−

Y), 0<

X<

1 and 0<

Y<

1.

2. An LED used for plant illumination according to claim 1, wherein 0<

Y<

0.2.

3. An LED used for plant illumination according to claim 1, wherein 0<

Y<

0.1.

4. An LED used for plant illumination according to claim 1, wherein 0<

Y<

0.05.

5. An LED used for plant illumination according to claim 1, wherein the light-emitting part has a barrier layer, forming a 2˜

40-pair alternating-layer structure with the strained light-emitting layer.

6. An LED used for plant illumination according to claim 5, wherein each alternating-layer structure is 5-100 nm thick.

7. An LED used for plant illumination according to claim 1, wherein the barrier layer has a component formula of (AlXGa1−

X)YIn(1−

Y)P (0.3≦

X≦

1 and 0<

Y<

1).

8. An LED used for plant illumination according to claim 1, wherein the LED also comprises a GaP window layer on the light-emitting part.

9. An LED used for plant illumination according to claim 1, wherein the peak light-emitting wavelength of the strained light-emitting layer is 650-750 nm.

10. An LED used for plant illumination according to claim 1, wherein the peak light-emitting wavelength of the strained light-emitting layer is 700-750 nm.