USE OF DIELECTRIC FILM TO REDUCE RESISTIVITY OF TRANSPARENT CONDUCTIVE OXIDE IN NANOWIRE LEDS
First Claim
1. A method of fabricating a light emitting diode (LED) device, comprising:
- forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of the LED device; and
depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of;
(a) depositing the layer using a chemical vapor deposition (CVD) process;
(b) depositing the layer at a temperature of 200°
C. or more; and
(c) depositing the layer using one or more chemically active precursors for the dielectric material.
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Accused Products
Abstract
Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200° C. or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.
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Citations
22 Claims
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1. A method of fabricating a light emitting diode (LED) device, comprising:
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forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of the LED device; and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of; (a) depositing the layer using a chemical vapor deposition (CVD) process; (b) depositing the layer at a temperature of 200°
C. or more; and(c) depositing the layer using one or more chemically active precursors for the dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A light emitting diode (LED) device comprising:
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a non-planar semiconductor surface; a transparent, electrically conductive material over at least a portion of the non-planar semiconductor surface; and a dielectric material over at least a portion of the transparent conductive material, wherein the dielectric material decreases a resistivity of the transparent, electrically conductive material by at least 50% relative to the resistivity of the transparent, electrically conductive material in the device without the dielectric material layer. - View Dependent Claims (19, 20, 21)
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22. A method of fabricating a semiconductor device, comprising:
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forming a layer of a transparent, electrically conductive material over at least a portion of the semiconductor device; and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of; (a) depositing the layer using a chemical vapor deposition (CVD) process; (b) depositing the layer at a temperature of 200°
C. or more; and(c) depositing the layer using one or more chemically active precursors for the dielectric material; and wherein the dielectric material decreases a resistivity of the transparent, electrically conductive material to a value that is 50% or less of the resistivity of the transparent, electrically conductive material in the device without the dielectric material layer.
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Specification