METHOD FOR FABRICATING FLEXIBLE NANO STRUCTURE INCLUDING DIELECTRIC PARTICLE SUPPORTERS

• US 20150174607A1
• Filed: 06/23/2014
• Published: 06/25/2015
• Est. Priority Date: 12/19/2013
• Status: Abandoned Application

• Current Assignee: SK Innovation Company Limited
• Original Assignee: SK Innovation Company Limited
• Inventors: KIM, Jun-Hyung
• Application Number:
  US14/312,509
• Publication Number:
  US 20150174607A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B05D 1/185 applying monomolecular layers B05D1/204 takes precedence
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: C23C 18/04 Pretreatment of the material to be coated C23C18/06 takes precedence
• CPC Class Codes: C23C 18/08 characterised by the deposition of metallic material
• CPC Class Codes: C23C 18/143 Radiation by light, e.g. photolysis or pyrolysis
• CPC Class Codes: C23C 18/145 Radiation by charged particles, e.g. electron beams or ion irradiation

Abstract

Provided is a flexible nano structure including dielectric particle supporters, a fabrication method thereof, and an application device thereof. The method for fabricating a flexible nano structure includes: forming a flexible substrate; forming a plurality of dielectric particle supporters with linkers bonded thereto over the flexible substrate; forming a plurality of metal ions over the linkers; and forming one or more metallic nanoparticles over to the linkers.

Claims

1. A method for fabricating a nano structure, comprising;

forming a flexible substrate;

forming a plurality of dielectric particle supporters with linkers bonded thereto over the flexible substrate;

forming a plurality of metal ions over the linkers; and

forming one or more metallic nanoparticles over the linkers.

2. The method of claim 1, wherein the forming of the metal ions over the linkers includes:

bonding the metal ions to the linkers.

3. The method of claim 2, wherein the forming of one or more metallic nanoparticles includes:

growing the metal ions bonded to the linkers.

4. The method of claim 3, wherein the forming of the flexible substrate includes:

forming a surface layer capable of bonding the linkers on a surface of the flexible substrate.

5. The method of claim 4, wherein the surface layer includes an organic material having a hydroxyl (—

OH) functional group.

6. The method of claim 3, wherein the flexible substrate is a polymer including one or a mixture of two or more selected from the group including polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), polycarbonate (PC), polypropylene (PP), triacetyl cellulose (TAC), polyethersulfone (PES), and polydimethylsiloxane (PDMS).

7. The method of claim 3, wherein the forming of one or more metallic nanoparticles includes:

applying energy to the metal ions.

8. The method of claim 3, further comprising:

bonding at least one of a dielectric organic material and an inorganic oxide to a surface of each of the metallic nanoparticles.

9. The method of claim 3, further comprising:

supplying an organic surfactant of one or more kinds before or during the forming of the one or more metallic nanoparticles.

10. The method of claim 9, wherein the organic surfactant is a nitrogen-containing organic material or a sulfur-containing organic material.

11. The method of claim 9, wherein the organic surfactant includes a first organic material and a second organic material of different kinds, and

the first organic material is a nitrogen-containing organic material or a sulfur-containing organic material, and

the second organic material is a phase-transfer catalyst-based organic material.

12. The method of claim 3, wherein the forming of the plurality of the dielectric particle supporters with the linkers bonded thereto over the flexible substrate includes:

preparing a dielectric particle supporter solution comprised of dielectric particles, linkers, and a solvent; and

applying or depositing the dielectric particle supporter solution to or on the flexible substrate.

13. The method of claim 3, wherein the dielectric particle supporters include a dielectric material having at least one element selected from the group including transition metals, post-transition metals, and metalloids.

14. The method of claim 3, wherein the dielectric particle supporters include at least one material selected from the group including a silicon oxide, a hafnium oxide, an aluminum oxide, a zirconium oxide, a barium-titanium composite oxide, an yttrium oxide, a tungsten oxide, a tantalum oxide, a zinc oxide, a titanium oxide, a tin oxide, a barium-zirconium composite oxide, a silicon nitride, a silicon oxynitride, a zirconium silicate, a hafnium silicate and polymers.

15. The method of claim 3, wherein the linkers include at least one functional group selected from the group including an amine group, a carboxyl group and a thiol group to be bonded to the metal ions.

16. The method of claim 3, wherein the bonding of the plurality of the metal ions to the linkers includes:

applying a metal precursor to the linkers.

17. The method of claim 3, wherein the bonding of the plurality of the metal ions to the linkers further includes:

applying a metal precursor solution, where a metal precursor is dissolved, to a structure where the linkers are bonded, or supplying a gas-phase metal precursor to the structure where the linkers are bonded.

18. The method of claim 7, wherein the energy is at least one selected from the group including heat energy, chemical energy, light energy, vibration energy, ion beam energy, electron beam energy, and radiation energy.

19. The method of claim 7, wherein the metallic nanoparticles are formed of one selected from the group including metal nanoparticles, metal oxide nanoparticles, metal nitride nanoparticles, metal carbide nanoparticles, and intermetallic compound nanoparticles,

20. The method of claim 7, wherein the energy is simultaneously applied to all metal ion-bonded regions.

21. The method of claim 7, wherein the energy is selectively or intermittently applied to keep a portion of the metal ions from being particlized.

22. The method of claim 7, wherein the applying of the energy is adjusted to control a size or density of the metallic nanoparticles.