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LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

  • US 20150179460A1
  • Filed: 01/23/2014
  • Published: 06/25/2015
  • Est. Priority Date: 12/25/2013
  • Status: Active Grant
First Claim
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1. A method for manufacturing a low temperature poly-silicon thin film transistor, including the following steps:

  • providing an insulating substrate,forming, on a buffer layer of the insulating substrate, at least one poly-silicon layer, on the surface of which a source region, a drain region, and a channel region of the low temperature poly-silicon thin film transistor are arranged,conducting a plasma enhanced chemical vapor deposition (PECVD) procedure for at least three times to form at least three dielectric layers on the channel region successively, such that a composite gate insulating layer is formed, wherein the compactness of each dielectric layer increases in order of the formation sequence thereof in the manufacturing method, andforming a gate electrode on the composite gate insulating layer.

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