Handle Substrates of Composite Substrates for Semiconductors

• US 20150179504A1
• Filed: 02/13/2015
• Published: 06/25/2015
• Est. Priority Date: 03/27/2013
• Status: Abandoned Application

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: Ide, Akiyoshi, Iwasaki, Yasunori, Miyazawa, Sugio
• Application Number:
  US14/621,699
• Publication Number:
  US 20150179504A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: Y10T 428/24355 Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Abstract

A handle substrate 11 or 11A is formed of an insulating polycrystalline material, the handle substrate has a surface 15 having a microscopic central line average surface roughness Ra of 5 nm or smaller, and height differences 3 are provided between exposed faces 2a of crystal grains 2 exposing to said surface 15.

Claims

1. A handle substrate of a composite substrate for a semiconductor;

said handle substrate comprising an insulating polycrystalline material,

wherein said handle substrate has a surface having a microscopic central line average surface roughness Ra of 5 nm or smaller; and

wherein height differences of 3 nm or larger and 100 nm or smaller are provided between exposed faces of crystal grains exposing to said surface.

2. The handle substrate of claim 1, wherein said insulating polycrystalline material comprises an oriented ceramics.

3. The handle substrate of claim 2, wherein said oriented ceramics has an orientation of 30 percent or higher and 95 percent or lower.

4. The handle substrate of claim 1, wherein said insulating polycrystalline material comprises a translucent alumina ceramics.

5. A composite substrate for a semiconductor, said composite substrate comprising said handle substrate of claim 1 and a donor substrate bonded with said surface of said handle substrate directly or through a bonding layer.