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COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE

  • US 20150179662A1
  • Filed: 02/04/2015
  • Published: 06/25/2015
  • Est. Priority Date: 06/30/2010
  • Status: Active Grant
First Claim
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1. A three-dimensional memory device comprising:

  • a stack of alternating layers comprising insulator layers and electrically conductive layers and located over a substrate;

    an opening extending through the stack;

    a blocking dielectric, at least one charge storage element and a tunneling dielectric located within the opening; and

    a semiconductor channel located within the opening, wherein each of the electrically conductive layers comprises at least a cobalt portion.

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