THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE

• US 20150179809A1
• Filed: 07/02/2013
• Published: 06/25/2015
• Est. Priority Date: 03/21/2013
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Liu, Xiang, Wang, Gang, Xue, Jianshe
• Granted Patent: US 9,240,485 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/441 Deposition of conductive or insulating materials for electrodes
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

A thin film transistor and method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer. The source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer. The formation of the source and drain buffer layer improves the adhesion of the source and drain electrodes thereon to the semiconductor layer therebeneath, and thus improves the performance of the TFT and image quality.

Claims

1. A thin film transistor comprising:

a substrate;

a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate;

a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes;

an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and

a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer,

wherein the source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer.

2. The thin film transistor according to claim 1, further comprising a conductive source isolating layer between the source buffer layer and the semiconductor layer and a conductive drain isolating layer between the drain buffer layer and the semiconductor layer.

3. The thin film transistor according to claim 2, wherein the source and drain isolating layers are arranged in a same layer, the source isolating layer completely covers the source contact hole, and the drain isolating layer completely covers the drain contact hole.

4. The thin film transistor according to claim 3, further comprising a pixel electrode layer arranged in a same layer with the source and drain isolating layers.

5. The thin film transistor according to claim 4, wherein the source and drain isolating layers and the pixel electrode layer are conductive layer of indium tin oxide or indium zinc oxide film.

6. The thin film transistor according to claim 1, wherein the source and drain buffer layers are a layer of copper aluminum alloy, copper manganese alloy, copper thallium alloy, copper titanium alloy or copper hafnium alloy.

7. The thin film transistor according to claim 2, wherein

the gate electrode is located on the substrate;

the gate insulating layer is located on the gate electrode;

the semiconductor layer is located on the gate insulating layer;

the etching stop layer is located on the semiconductor layer and has the source and drain contact holes therein;

the source and drain isolating layers are located on the etching stop layer, the source isolating layer contacts the semiconductor layer at the source contact hole, and the drain isolating layer contacts the semiconductor layer at the drain contact hole;

the source buffer layer is located on the source isolating layer, and the drain buffer layer is located on the drain isolating layer; and

the source electrode is located on the source buffer layer, and the drain electrode is located on the drain buffer layer.

8. The thin film transistor according to claim 2, wherein

the semiconductor layer is located on the substrate;

the etching stop layer is located on the semiconductor layer and has the source and drain contact holes therein;

the source and drain isolating layers are located on the etching stop layer, the source isolating layer contacts the semiconductor layer at the source contact hole, and the drain isolating layer contacts the semiconductor layer at the drain contact hole;

the source buffer layer is located on the source isolating layer, and the drain buffer layer is located on the drain isolating layer;

the source electrode is located on the source buffer layer, and the drain electrode is located on the drain buffer layer;

the gate insulating layer is located on the source and drain electrodes; and

the gate electrode is located on the gate insulating layer.

9. The thin film transistor according to claim 1, further comprising a protection layer as the outmost layer of the thin film transistor, the protection layer comprises a portion in a displaying region of the substrate and a portion in a pad region in a periphery of the substrate.

10. An array substrate comprising the thin film transistor according to claim 1.

11. (canceled)

12. A method for manufacturing a thin film transistor comprising the steps of:

forming a pattern of a gate electrode, a pattern of a source electrode, a pattern of a drain electrode, and a pattern of a semiconductor layer;

forming a pattern of a gate insulating layer and a pattern of an etching stop layer; and

forming a pattern of a source buffer layer and a pattern of a drain buffer layer,

wherein the gate insulating layer is located between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes, the etching stop layer is located between the semiconductor layer and the source and drain electrodes and has a source contact hole and a drain contact hole therein,

the source and drain buffer layers are located between the source and drain electrodes respectively and the semiconductor layer, and

wherein the source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer.

13. The method according to claim 12, further comprising, before forming the source and drain buffer layers, forming a conductive source isolating layer between the source buffer layer and the semiconductor layer and a conductive drain isolating layer between the drain buffer layer and the semiconductor layer.

14. The method according to claim 13, comprising

forming the pattern of the gate electrode on the substrate by using a patterning process;

forming the pattern of the gate insulating layer on the substrate with the pattern of the gate electrode formed thereon by using a patterning process;

forming the pattern of the semiconductor layer on the substrate with the pattern of the gate insulating layer thereon by using a patterning process;

forming the pattern of the etching stop layer on the substrate with the pattern of the semiconductor layer thereon by using a patterning process;

forming the pattern of the source and drain isolating layers on the substrate with the pattern of the etching stop layer thereon by using a patterning process; and

forming, on the substrate with the source and drain isolating layers formed thereon, the source buffer layer located on the source isolating layer and the pattern of the source electrode located on the source buffer layer as well as the drain buffer layer located on the drain isolating layer and the pattern of the drain electrode located on the drain buffer layer, by using a patterning process.

15. The method according to claim 13, comprising

forming the pattern of the semiconductor layer on the substrate by using a patterning process;

forming the pattern of the etching stop layer on the substrate with the pattern of the semiconductor layer thereon by using a patterning process, the etching stop layer having a source contact hole and a drain contact hole therein;

forming the pattern of the source isolating layer at the source contact hole and a patterned drain isolating layer at the drain contact hole on the substrate with the pattern of the etching stop layer thereon by using a patterning process;

forming, on the substrate with the source and drain isolating layers formed thereon, the source buffer layer located on the source isolating layer and the pattern of the source electrode located on the source buffer layer as well as the drain buffer layer located on the drain isolating layer and the pattern of the drain electrode located on the drain buffer layer, by using a patterning process;

forming the pattern of the gate insulating layer on the substrate with the pattern of the source and drain electrodes formed thereon by using a patterning process; and

forming the pattern of the gate electrode on the substrate with the gate insulating layer formed thereon by using a patterning process.

16. The method according to claim 14, wherein the pixel electrode is formed in a same process as the source and drain isolating layers, and forming the pixel electrode, the source and drain isolating layers comprises:

forming a layer of conductive film on the substrate with the pattern of the etching stop layer formed thereon by using a film coating process; and

forming the pattern of the source isolating layer at the source contact hole, the pattern of the drain isolating layer at the drain contact hole, and the pattern of the pixel electrode from the layer of conductive film by using a patterning process.

17. The method according to claim 14, wherein forming, on the substrate with the source and drain isolating layers formed thereon, the source buffer layer located on the source isolating layer and the pattern of the source electrode located on the source buffer layer as well as the drain buffer layer located on the drain isolating layer and the pattern of the drain electrode located on the drain buffer layer, by using a patterning process comprises:

forming a layer of Cu alloy film and a layer of Cu film in this order on the substrate with the source and drain isolating layers formed thereon by using a film coating process;

heating the substrate with the layer of Cu alloy film and the layer of Cu film formed thereon such that the layer of Cu alloy film becomes a bi-layer film after being heated, the bi-layer film comprising a metal Cu layer as an upper layer and a metal film formed from the metal other than Cu in the Cu alloy as a lower layer; and

patterning the layer of Cu alloy film and the layer of Cu film that have been heated so as to form the source and drain buffer layers, the source electrode on the source buffer layer and the drain electrode on the drain buffer layer.

18. The method according to claim 17, wherein forming the layer of Cu alloy film formed by using the film coating process comprise:

forming a layer of Cu alloy film by using a film coating process, and the Cu alloy contains Cu and another metal, of which the molar percent in the Cu alloy is in the range of 0.1%˜

30%.

19. The method according to claim 15, wherein the pixel electrode is formed in a same process as the source and drain isolating layers, and forming the pixel electrode, the source and drain isolating layers comprises:

forming a layer of conductive film on the substrate with the pattern of the etching stop layer formed thereon by using a film coating process; and

forming the pattern of the source isolating layer at the source contact hole, the pattern of the drain isolating layer at the drain contact hole, and the pattern of the pixel electrode from the layer of conductive film by using a patterning process.

20. The method according to claim 15, wherein forming, on the substrate with the source and drain isolating layers formed thereon, the source buffer layer located on the source isolating layer and the pattern of the source electrode located on the source buffer layer as well as the drain buffer layer located on the drain isolating layer and the pattern of the drain electrode located on the drain buffer layer, by using a patterning process comprises:

forming a layer of Cu alloy film and a layer of Cu film in this order on the substrate with the source and drain isolating layers formed thereon by using a film coating process;

heating the substrate with the layer of Cu alloy film and the layer of Cu film formed thereon such that the layer of Cu alloy film becomes a bi-layer film after being heated, the bi-layer film comprising a metal Cu layer as an upper layer and a metal film formed from the metal other than Cu in the Cu alloy as a lower layer; and

patterning the layer of Cu alloy film and the layer of Cu film that have been heated so as to form the source and drain buffer layers, the source electrode on the source buffer layer and the drain electrode on the drain buffer layer.