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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE

  • US 20150179883A1
  • Filed: 12/22/2014
  • Published: 06/25/2015
  • Est. Priority Date: 12/30/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a light-emitting semiconductor device, the method comprising:

  • providing a light-emitting layer stack;

    forming a stop layer over the light-emitting layer stack;

    forming a light-transmission layer on the stop layer, the light-transmission layer formed of a crystalline III-V semiconductor material that is optically transmissive to emission wavelengths of the light-emitting layer stack;

    patterning a mask layer on the light-transmission layer such that portions of the light-transmission layer are exposed; and

    thermally texturing the exposed portions of the light-transmission layer, wherein the stop layer has a decomposition temperature that is higher than that of the light-transmission layer such that texturing is prevented from extending into the stop layer.

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