METHOD OF FABRICATING WHITE LED DEVICES

• US 20150179901A1
• Filed: 12/16/2014
• Published: 06/25/2015
• Est. Priority Date: 12/23/2013
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Jeong-Hee Kim, Min-Jung Kim
• Inventors: OK, Jung-Tae, KIM, Min-Jung, KIM, Jeong-Hee
• Granted Patent: US 9,728,686 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device and a method of fabricating the same is provided. The device includes an LED chip having a first main surface, a second main surface opposing the first main surface, and one or more side surfaces extending between the first and second main surfaces. A reflective side layer surrounds the one or more side surfaces of the LED chip. The reflective side layer has a first main surface and a second main surface opposing the first main surface extending in a first direction, and an opening extending between the first and second main surfaces in a second direction substantially perpendicular to the first direction. The opening surrounds the chip. A phosphor film overlies the first main surface of the chip and the first main surface of the reflective side layer. At least one electrode is disposed on the second main surface of the chip.

Claims

1. A light emitting device comprising:

an LED chip having a first main surface, a second main surface opposing the first main surface, and one or more side surfaces extending between the first main surface and second main surface;

a reflective side layer surrounding the one or more side surfaces of the LED chip, wherein the reflective side layer has a first main surface and a second main surface opposing the first main surface extending in a first direction, and an opening extending between the first main surface and the second main surface in a second direction substantially perpendicular to said first direction, wherein said opening surrounds the LED chip;

a phosphor film overlying the first main surface of the LED chip and the first main surface of the reflective side layer; and

at least one electrode disposed on the second main surface of the LED chip.

2. The light emitting device of claim 1, wherein the reflective side layer has one or more outer side surfaces extending between the first main surface and the second main surface of the reflective side layer in the second direction,

wherein the phosphor layer has a first main surface and a second main surface opposing the first main surface, and one or more side surfaces extending between the first main surface and the second main surface of the phosphor film, and

wherein said outer side surfaces of the reflective side layer and the side surfaces of the phosphor film are substantially aligned along said second direction.

3. The light emitting device of claim 1, further comprising a buffer layer between the phosphor film and the LED chip.

4. The light emitting device of claim 2, further comprising a buffer layer, wherein outer side surfaces of the buffer layer are substantially aligned with said outer side surfaces of the reflective side layer and side surfaces of the phosphor film along the second direction.

5. The light emitting device of claim 3, wherein the buffer layer extends along the side surfaces of the LED chip.

6. The light emitting device of claim 1, wherein the phosphor film comprises a first phosphor film layer comprising a first phosphor material and a second phosphor film layer comprising a second phosphor material, wherein the second phosphor material is different from the first phosphor material.

7. A light emitting device comprising:

an LED chip having a first main surface, a second main surface opposing the first main surface, and one or more side surfaces extending between the first main surface and second main surface;

a reflective side layer surrounding the one or more side surfaces of the LED chip, wherein the reflective side layer has a first main surface and a second main surface opposing the first main surface;

a phosphor film overlying the first main surface of the LED chip and the first main surface of the reflective side layer; and

at least one electrode disposed on the second main surface of the LED chip,

wherein the first main surface of the LED chip and the first main surface of the reflective side layer are substantially coplanar.

8. The light emitting device of claim 7, wherein the phosphor film comprises a first phosphor film layer comprising a first phosphor material and a second phosphor film layer comprising a second phosphor material, wherein the second phosphor material is different from the first phosphor material.

49. The light emitting device of claim 7, further comprising a buffer layer between the phosphor film and the LED chip.

50. The light emitting device of claim 8, further comprising a buffer layer between the phosphor film and the LED chip.

9. A light emitting device comprising:

an LED chip having a first main surface, a second main surface opposing the first main surface, and one or more side surfaces extending between the first main surface and second main surface;

a phosphor side layer surrounding the one or more side surfaces of the LED chip, wherein the phosphor side layer has a first main surface and a second main surface opposing the first main surface extending in a first direction;

a phosphor film overlying the first main surface of the LED chip and the first main surface of the phosphor side layer, wherein the phosphor film has a first main surface and a second main surface opposing the first main surface extending in the first direction; and

at least one electrode disposed on the second main surface of the LED chip,

wherein the phosphor film and the phosphor side layer are different from each other.

10. The light emitting device of claim 9, wherein the phosphor film and the phosphor side layer have different densities.

11. The light emitting device of claim 10, wherein the density of the phosphor side layer is less than the density of the phosphor film.

12. The light emitting device of claim 10, wherein the density of the phosphor side layer is about 35-50% of the density of the phosphor film.

13. The light emitting device of claim 9 wherein the phosphor side layer comprises a first phosphor material, and the phosphor film comprises a second phosphor material, wherein the second phosphor material is different from the first phosphor material.

14. The light emitting device of claim 9, wherein the phosphor side layer has one or more outer side surfaces extending between the first main surface and the second main surface of the phosphor side layer in a second direction substantially perpendicular to the first direction, and the phosphor film has one or more side surfaces extending in the second direction between the first main surface and the second main surface of the phosphor film.

15. The light emitting device of claim 14, further comprising a buffer layer between the phosphor film and the phosphor side layer, wherein side surfaces of the buffer layer are substantially aligned with said outer side surfaces of the phosphor side layer and said side surfaces of the phosphor film along the second direction.

16. The light emitting device of claim 9, further comprising a buffer layer between the phosphor film and the phosphor side layer.

17. The light emitting device of claim 16, wherein the buffer layer extends along the side surfaces of the LED chip.

18. The light emitting device of claim 9, wherein the phosphor film comprises a first phosphor film layer comprising a first phosphor material and a second phosphor film layer comprising a second phosphor material, wherein the second phosphor material is different from the first phosphor material.

19-48. -48. (canceled)